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NCP5901DR2G

Onsemi

NCP5901DR2G by Onsemi

NCP5901DR2G by Onsemi is a MOSFET Gate Driver with 8 terminals, operating voltage range of 4.5-13.2V, and high side driver feature. It has a small outline package style, matte tin terminal finish, and can withstand temperatures from -10 to 125°C. Ideal for applications requiring precise control of power supplies in compact spaces.

Median Price

$0.207

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,348 parts In-Stock

1+ parts

$0.490

100+ parts

$0.282

1k+ parts

$0.199

10k+ parts

$0.163

1,348

$0.490

$0.282

$0.199

$0.163

DigiKey

USA . 25,000 parts In-Stock

1+ parts

-

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$0.150

25,000

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$0.150

Flip Electronics (Authorized)

USA . 25,000 parts In-Stock

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25,000

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Rochester

USA . 2,912 parts In-Stock

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-

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$0.215

1k+ parts

$0.179

10k+ parts

$0.159

2,912

-

$0.215

$0.179

$0.159

Verical

USA . 2,431 parts In-Stock

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$0.199

2,431

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$0.199

Distributors (In-Stock)

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Digiode

USA . 882 parts In-Stock

1+ parts

$0.167

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882

$0.167

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Nova Conductors

Japan . 90 parts In-Stock

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$0.228

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90

$0.228

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Chip Stock

USA . 70,000 parts In-Stock

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Flip Electronics

USA . 25,000 parts In-Stock

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Vyrian

USA . 7,545 parts In-Stock

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Microfarads

USA . 2,433 parts In-Stock

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Rebound Electronics

UK . 981 parts In-Stock

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981

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Distributors (Availability)

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Ampacity Inc.

Singapore . 7,361 parts In-Stock

1+ parts

$0.150

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7,361

$0.150

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Corphita

USA . 956 parts In-Stock

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$0.158

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956

$0.158

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Corohmni

South Africa . 483 parts In-Stock

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$0.176

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$0.176

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Continental Prestige Electronics

USA . 2,799 parts In-Stock

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$0.228

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$0.224

2,799

$0.228

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$0.224

Argo Parts USA

USA . 1,353 parts In-Stock

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$0.228

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$0.221

1,353

$0.228

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$0.221

Netroflash

USA . 1,000 parts In-Stock

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$0.228

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$0.224

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1,000

$0.228

$0.224

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Vigor

Singapore . 500 parts In-Stock

1+ parts

$0.590

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500

$0.590

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Microchip USA

USA . 5,366 parts In-Stock

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$1.353

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5,366

$1.353

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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TANS Electronics

Latvia . 6,095 parts In-Stock

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SupplyDigital Components

Austria . 4,162 parts In-Stock

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Problanco Electronics

Mexico . 3,771 parts In-Stock

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Assy Fe

Spain . 1,733 parts In-Stock

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Kepictronics

USA . 1,646 parts In-Stock

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Lixinc

USA . 276 parts In-Stock

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Kulean Microsystems

USA . 228 parts In-Stock

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UHIMA Technologies

Türkiye . 192 parts In-Stock

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Overview

Unlock the full potential of your MOSFET applications with the NCP5901DR2G by Onsemi. Trusted for its superior quality and reliability, this MOSFET gate driver offers unmatched performance and efficiency. With a compact design and wide operating temperature range, this product is perfect for a variety of high-power applications. Experience seamless operation and increased productivity with the NCP5901DR2G - the ultimate choice for professionals seeking top-notch performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the internal components of the MOSFET gate driver.

Surface Mount: YES

Surface mount capability makes it easy to integrate this MOSFET gate driver into electronic circuit boards for seamless installation.

Maximum Supply Voltage: 13.2 V

The high maximum supply voltage allows for flexibility in operating conditions and compatibility with various power supplies.

Package Shape: RECTANGULAR

Rectangular package shape simplifies the design and layout of the circuit board, optimizing space usage.

No. of Terminals: 8

Having 8 terminals allows for multiple connections and configurations, enabling versatile applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in demanding environments with elevated temperatures.

Minimum Operating Temperature: -10 °C

Low minimum operating temperature makes this MOSFET gate driver suitable for use in a wide range of temperature conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and enhances the overall quality of the connections.

High Side Driver: YES

The presence of a high side driver offers flexibility in driving power MOSFETs, enabling efficient control of the load.

Technical Specifications

MOSFET Gate Drivers NCP5901DR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-10 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/13.2

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

NCP5901DR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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