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NCP3418BMNR2G

Onsemi

NCP3418BMNR2G by Onsemi

NCP3418BMNR2G by Onsemi is a MOSFET gate driver with 12V power supply, 13.2V max supply voltage, and 85 °C max operating temp. Ideal for half-bridge based applications, it features small outline package style and dual terminal position for efficient performance in compact spaces.

Median Price

$0.379

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 94,466 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.296

10k+ parts

$0.264

94,466

-

$0.357

$0.296

$0.264

Verical

USA . 8,494 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.401

10k+ parts

$0.330

8,494

-

-

$0.401

$0.330

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,472 parts In-Stock

1+ parts

$0.277

100+ parts

-

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10k+ parts

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2,472

$0.277

-

-

-

Chip Stock

USA . 48,000 parts In-Stock

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48,000

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Vyrian

USA . 13,095 parts In-Stock

1+ parts

-

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13,095

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Prism Electronics

USA . 24 parts In-Stock

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24

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Distributors (Availability)

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Corphita

USA . 1,450 parts In-Stock

1+ parts

$0.263

100+ parts

-

1k+ parts

-

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1,450

$0.263

-

-

-

Vigor

Singapore . 792 parts In-Stock

1+ parts

$0.280

100+ parts

-

1k+ parts

-

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792

$0.280

-

-

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Corohmni

South Africa . 435 parts In-Stock

1+ parts

$0.292

100+ parts

-

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435

$0.292

-

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Component Stockers USA

USA . 97,028 parts In-Stock

1+ parts

$0.300

100+ parts

$0.280

1k+ parts

$0.260

10k+ parts

$0.260

97,028

$0.300

$0.280

$0.260

$0.260

AZTECH Wire

Italy . 328 parts In-Stock

1+ parts

$15.070

100+ parts

-

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328

$15.070

-

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Continental Prestige Electronics

USA . 94,466 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.296

10k+ parts

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94,466

-

-

$0.296

-

Kulean Microsystems

USA . 8,168 parts In-Stock

1+ parts

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8,168

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TANS Electronics

Latvia . 7,794 parts In-Stock

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7,794

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SupplyDigital Components

Austria . 6,163 parts In-Stock

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6,163

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Kepictronics

USA . 4,571 parts In-Stock

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4,571

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S.R.D Solutions

India . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 2,893 parts In-Stock

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2,893

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Futuretech Components

Singapore . 690 parts In-Stock

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690

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Microchip USA

USA . 378 parts In-Stock

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378

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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167

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Perfect Parts

USA . 27 parts In-Stock

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27

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Overview

Discover the NCP3418BMNR2G by Onsemi, a cutting-edge MOSFET gate driver that guarantees top-notch quality and reliability. With a small outline, heat sink profile, and a wide range of operating temperatures, this driver is perfect for various applications. Whether you're looking to enhance power supplies or improve high-side driving, this product offers unmatched value and benefits. Trust in Onsemi's expertise and elevate your projects with the NCP3418BMNR2G today.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and secure mounting onto PCBs, saving space and reducing assembly time.

Maximum Supply Voltage: 13.2 V

Can handle higher supply voltages, increasing the range of applications it can be used for.

Package Shape: SQUARE

Square shape allows for more efficient use of space on the PCB.

Power Supplies (V): 12

Optimal power supply voltage for the driver to operate efficiently.

No. of Terminals: 10

Provides multiple connection points for easy integration into circuit designs.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Compact package style helps in saving space and allows for efficient heat dissipation.

Minimum Supply Voltage: 4.6 V

Can operate at lower supply voltages, suitable for applications where power constraints are a concern.

Maximum Operating Temperature: 85 °C

Capable of operating at higher temperatures, making it suitable for industrial environments.

Minimum Operating Temperature: 0 °C

Can operate in lower temperature conditions, providing versatility in different environments.

Terminal Finish: Nickel/Gold/Palladium (Ni/Au/Pd)

Quality terminal finish ensures good conductivity and reliability over time.

Terminal Position: DUAL

Dual terminal position allows for secure connections and better current handling capabilities.

Maximum Seated Height: 1 mm

Low profile design helps in compact and slim device designs.

Width: 3 mm

Narrow width makes it easy to fit into tight spaces on the PCB.

High Side Driver: YES

Capability to drive high-side MOSFETs, essential for many power electronics applications.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperatures for a specified duration, ensuring reliable soldering during manufacturing.

Peak Reflow Temperature °C: 260

Designed to endure high reflow temperatures, ensuring robustness during assembly processes.

Length: 3 mm

Compact length allows for flexible placement on the PCB.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and RoHS standards.

Nominal Supply Voltage: 12 V

Optimal operating voltage for stable and efficient performance.

Terminal Pitch: 0.5 mm

Fine terminal pitch enables precise connections and compact layout on the PCB.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half-bridge based design provides flexibility in driving MOSFETs, suitable for a variety of applications.

Technical Specifications

MOSFET Gate Drivers NCP3418BMNR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-XDSO-N10

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC10,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

4.6 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Gold/Palladium (Ni/Au/Pd)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Trade Compliance

NCP3418BMNR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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