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NCP303LSN28T1G

Onsemi

NCP303LSN28T1G by Onsemi

NCP303LSN28T1G by Onsemi is a Power Management IC with Vsup of 1.5V, suitable for automotive applications. It has a small outline package style, dual terminal position, and operates b/w -40 to 125 °C. With a CMOS technology and matte tin finish, it supports power supply circuits efficiently.

Median Price

$0.302

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics (Authorized)

USA . 4,965 parts In-Stock

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EBV Elektronik

Germany . 3,000 parts In-Stock

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3,000

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Rochester

USA . 1,793 parts In-Stock

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-

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$0.314

1k+ parts

$0.261

10k+ parts

$0.232

1,793

-

$0.314

$0.261

$0.232

Verical

USA . 1,793 parts In-Stock

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$0.290

1,793

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$0.290

Distributors (In-Stock)

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Digiode

USA . 900 parts In-Stock

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$0.245

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900

$0.245

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Chip Stock

USA . 13,780 parts In-Stock

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13,780

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Flip Electronics

USA . 4,965 parts In-Stock

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Vyrian

USA . 2,557 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,279 parts In-Stock

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$0.232

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2,279

$0.232

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Corohmni

South Africa . 272 parts In-Stock

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$0.258

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272

$0.258

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Vigor

Singapore . 701 parts In-Stock

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$0.500

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701

$0.500

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AZTECH Wire

Italy . 102 parts In-Stock

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$17.280

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Component Stockers USA

USA . 767 parts In-Stock

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$99.990

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GreenTree Electronics

Israel . 16,800 parts In-Stock

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Perfect Parts

USA . 13,214 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 6,983 parts In-Stock

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Problanco Electronics

Mexico . 6,666 parts In-Stock

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SupplyDigital Components

Austria . 4,440 parts In-Stock

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TANS Electronics

Latvia . 4,093 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 482 parts In-Stock

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Microchip USA

USA . 361 parts In-Stock

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iodParts Technologies Inc.

India . 46 parts In-Stock

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Overview

Unlock the power of efficient energy management with the NCP303LSN28T1G by Onsemi. This Power Management IC boasts top-notch quality and reliability, making it the perfect choice for a wide range of applications. With its compact design and advanced technology, this product offers customers unparalleled value and performance. Say goodbye to power-related headaches and hello to seamless operation with the NCP303LSN28T1G. Elevate your projects with the best in power supply support circuits from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and insulation for the IC, ensuring reliability and durability in various operating conditions.

Surface Mount: YES

Ease of installation and compact design make it suitable for space-constrained applications.

Nominal Supply Voltage (Vsup): 1.5 V

Optimal voltage level for efficient power management and performance.

Maximum Operating Temperature: 125 °C

Ability to operate at high temperatures without compromising performance or safety.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall efficiency.

Technical Specifications

Power Management ICs NCP303LSN28T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.8V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.8V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN28T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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