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NCP303LSN11T1G

Onsemi

NCP303LSN11T1G by Onsemi

NCP303LSN11T1G by Onsemi is a Power Management IC with 5 terminals, Vsup of 1.5V, and operating temp range from -40 to 125 °C. It's a CMOS technology IC for automotive applications with supply voltage ranging from 0.8V to 10V. The package style is small outline, thin profile, shrink pitch, making it suitable for surface mount designs.

Median Price

$0.232

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 19 parts In-Stock

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$0.960

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$0.960

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Rochester

USA . 81,000 parts In-Stock

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$0.241

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$0.200

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$0.178

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$0.178

Verical

USA . 81,000 parts In-Stock

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$0.223

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EBV Elektronik

Germany . 9,000 parts In-Stock

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Chip1Stop

Japan . 70 parts In-Stock

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$0.166

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$0.166

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Nova Conductors

Japan . 600 parts In-Stock

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$0.271

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Digiode

USA . 1,003 parts In-Stock

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$0.570

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$0.570

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Flip Electronics

USA . 81,000 parts In-Stock

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Vyrian

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Ampacity Inc.

Singapore . 2,895 parts In-Stock

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$0.141

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$0.141

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Corohmni

South Africa . 279 parts In-Stock

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$0.260

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Aranea Global

USA . 1,000 parts In-Stock

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$0.266

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$0.255

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$0.266

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Corphita

USA . 633 parts In-Stock

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$0.540

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Component Stockers USA

USA . 23 parts In-Stock

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$0.580

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Vigor

Singapore . 250 parts In-Stock

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$0.630

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$0.630

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QUARKTWIN TECHNOLOGY LTD

USA . 19,235 parts In-Stock

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Perfect Parts

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Kepictronics

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Lixinc

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SupplyDigital Components

Austria . 7,371 parts In-Stock

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Kulean Microsystems

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Authorized Procurement Solutions

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Microchip USA

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Metaverse IC Inc.

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GreenTree Electronics

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Problanco Electronics

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Futuretech Components

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UHIMA Technologies

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TANS Electronics

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Overview

Unlock the power of efficient energy management with the NCP303LSN11T1G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. This Power Management IC is designed to optimize performance while offering seamless integration in a compact package. Ideal for automotive applications, this IC provides a wide range of benefits including low power consumption, precise voltage regulation, and a wide operating temperature range. Say goodbye to energy wastage and hello to enhanced efficiency with the NCP303LSN11T1G.

Feature Benefit Bullets

Mounting Type: CABLE

The cable mounting type allows for easy installation and connection of wires, making this product convenient to use.

Safety Approval: CSA; UL

Having safety approvals from CSA and UL ensures that this product meets industry safety standards, providing peace of mind to users.

Wire Gauge: 12 AWG

Supporting 12 AWG wire gauge allows for compatibility with a wide range of wire sizes, making this product versatile in various applications.

Voltage (Rated): 300 V

With a rated voltage of 300 V, this product is suitable for use in applications where a higher voltage is required.

Terminal & Terminal Block Type: STRIP TERMINAL BLOCK

The strip terminal block type offers a secure and reliable connection for wires, ensuring robust performance in electrical systems.

Wire Cross Section: 2.5 mm2

Supporting a wire cross-section of 2.5 mm2 allows for efficient power transmission and ensures optimal conductivity in the electrical system.

Fastening Method: SCREW

The screw fastening method enables easy and secure connections, reducing the risk of loose connections and ensuring the reliability of the electrical system.

Current (Rated): 15 A

With a rated current of 15 A, this product can handle higher current loads, making it suitable for applications requiring greater power capacity.

No. of Ways: 17

Having 17 ways enables multiple connections to be made within the terminal block, allowing for complex electrical configurations and greater versatility.

Technical Specifications

Power Management ICs NCP303LSN11T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 1.1V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0012 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.1V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN11T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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