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NCP302HSN27T1

Onsemi

NCP302HSN27T1 by Onsemi

NCP302HSN27T1 by Onsemi is a Power Management IC with Vsup ranging from 0.8V to 10V, suitable for automotive applications. It has a small outline package style, dual terminals, and operates b/w -40 °C to 125°C. This CMOS technology IC supports power supply circuits with a max seated height of 1.1mm.

Median Price

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Lifecycle Status

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3

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1k+

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Chip Stock

USA . 3,670 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 413 parts In-Stock

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$12.160

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Component Stockers USA

USA . 304 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 26,797 parts In-Stock

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TANS Electronics

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Problanco Electronics

Mexico . 5,324 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 4,735 parts In-Stock

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Corphita

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Vigor

Singapore . 321 parts In-Stock

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Microchip USA

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South Africa . 184 parts In-Stock

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Overview

Discover the NCP302HSN27T1 by Onsemi, a top-tier Power Management IC designed to optimize performance and efficiency in various applications. Onsemi's reputation for excellence ensures unmatched quality and reliability, making this product the ideal choice for automotive and industrial settings. With a wide range of benefits including low power consumption, high temperature tolerance, and compact design, the NCP302HSN27T1 delivers exceptional value to customers seeking cutting-edge solutions for their power management needs. Elevate your projects with the superior performance and innovation of Onsemi's NCP302HSN27T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for applications where weight and durability are important factors.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort in the manufacturing process.

Nominal Supply Voltage (Vsup): 1.5 V

The nominal supply voltage of 1.5V makes this power management IC suitable for low power applications, helping to conserve energy.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this power management IC can withstand demanding operating conditions without compromising performance.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, ensuring reliable electrical connections in the application.

Minimum Supply Voltage (Vsup): 0.8 V

The low minimum supply voltage of 0.8V allows for operation in systems with limited power source availability, increasing the versatility of the IC.

Temperature Grade: AUTOMOTIVE

Being automotive-grade means this power management IC meets strict automotive industry standards for reliability and performance, making it suitable for automotive applications.

Technology: CMOS

Utilizing CMOS technology results in low power consumption and high noise immunity, making this power management IC efficient and reliable in various applications.

Technical Specifications

Power Management ICs NCP302HSN27T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.7V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0012 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.7V

Width (mm):

1.5 mm

Trade Compliance

NCP302HSN27T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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