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NCP301LSN28T1

Onsemi

NCP301LSN28T1 by Onsemi

NCP301LSN28T1 by Onsemi is a Power Management IC with Vsup of 1.5V, Isup of 0.0013mA, and V range of 0.8-10V. Ideal for automotive applications due to its temperature grade and compact design in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 4,244 parts In-Stock

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Bristol Electronics

USA . 2,629 parts In-Stock

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Flex Direct, LLC

USA . 2,629 parts In-Stock

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Digiode

USA . 317 parts In-Stock

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Ampacity Inc.

Singapore . 595 parts In-Stock

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$5.500

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595

$5.500

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$16.348

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$14.877

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$13.405

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AZTECH Wire

Italy . 419 parts In-Stock

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$18.530

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Problanco Electronics

Mexico . 6,649 parts In-Stock

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TANS Electronics

Latvia . 4,442 parts In-Stock

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SupplyDigital Components

Austria . 1,964 parts In-Stock

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Corphita

USA . 1,347 parts In-Stock

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Kulean Microsystems

USA . 1,140 parts In-Stock

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Microchip USA

USA . 389 parts In-Stock

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UHIMA Technologies

Türkiye . 357 parts In-Stock

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Corohmni

South Africa . 325 parts In-Stock

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Vigor

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Overview

Enhance your power management solutions with the NCP301LSN28T1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional quality and reliability in their products. This Power Management IC is versatile and ideal for various applications. With a wide supply voltage range, small form factor, and automotive-grade temperature grade, this product offers unmatched value and benefits to customers. Trust Onsemi to provide innovative solutions for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material allows for a lightweight and durable package, making it suitable for a variety of applications.

Surface Mount: YES

The surface mount feature makes installation and assembly easier, particularly in compact electronic devices.

Nominal Supply Voltage (Vsup): 1.5 V

The 1.5 V nominal supply voltage provides stable power to the device, ensuring consistent performance.

No. of Terminals: 5

Having 5 terminals allows for efficient connectivity and versatility in circuit design.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this power management IC can withstand high temperature environments and maintain functionality.

Minimum Operating Temperature: -40 °C

The -40 °C minimum operating temperature ensures reliability in cold environments without compromising performance.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and enhances electrical conductivity, improving overall reliability.

Width (mm): 1.5 mm

The compact width of 1.5 mm allows for space-efficient placement in electronic circuits and devices.

Minimum Supply Voltage (Vsup): 0.8 V

With a minimum supply voltage of 0.8 V, this power management IC can operate efficiently even with lower input voltages.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures that the IC can withstand and perform reliably in automotive applications where temperature variations are common.

Maximum Supply Current (Isup): 0.0013 mA

The low maximum supply current of 0.0013 mA helps in reducing power consumption and extending the battery life of the device.

Technical Specifications

Power Management ICs NCP301LSN28T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.8V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.8V

Width (mm):

1.5 mm

Trade Compliance

NCP301LSN28T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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