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NCP300LSN18T1

Onsemi

NCP300LSN18T1 by Onsemi

NCP300LSN18T1 by Onsemi is a Power Management IC with Vsup of 1.5V, Isup of 0.0013mA, and V threshold of +1.8V. It is used in automotive applications for power supply support circuits due to its compact size, CMOS technology, and wide operating temperature range from -40 °C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,868 parts In-Stock

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R&J Components

USA . 1,995 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 527 parts In-Stock

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$8.230

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Component Stockers USA

USA . 432 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 7,665 parts In-Stock

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Problanco Electronics

Mexico . 6,876 parts In-Stock

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TANS Electronics

Latvia . 3,691 parts In-Stock

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Corphita

USA . 2,085 parts In-Stock

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Vigor

Singapore . 785 parts In-Stock

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SupplyDigital Components

Austria . 502 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 289 parts In-Stock

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Corohmni

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Overview

Elevate your power management capabilities with the NCP300LSN18T1 by Onsemi. Designed with precision and innovation, this Power Management IC offers a seamless solution for various applications in automotive and other industries. With Onsemi's reputation for excellence in manufacturing, you can trust in the quality and reliability of this product. Experience the value and benefits of efficient power supplies, compact design, and wide operating temperature range that the NCP300LSN18T1 brings to your projects. Immerse yourself in the world of high-performance technology with Onsemi's cutting-edge Power Management ICs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

The surface mount capability allows for easy and secure installation on circuit boards, making it convenient for manufacturing and assembly processes.

Nominal Supply Voltage (Vsup): 1.5 V

The nominal supply voltage of 1.5V ensures compatibility with a wide range of applications that require stable power management at this voltage level.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this power management IC can withstand harsh environmental conditions and extended usage without compromising performance.

Technology: CMOS

Being based on CMOS technology, this power management IC offers low power consumption, high speed operation, and compatibility with a variety of digital systems, making it an efficient choice for power management solutions.

Technical Specifications

Power Management ICs NCP300LSN18T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 1.8V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

0.7/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.8V

Width (mm):

1.5 mm

Trade Compliance

NCP300LSN18T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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