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NCP300LSN185T1

Onsemi

NCP300LSN185T1 by Onsemi

NCP300LSN185T1 by Onsemi is a Power Management IC with Vsup ranging from 0.8V to 10V, suitable for automotive applications. It features a small outline package with dual terminals and operates b/w -40 °C to 125°C. This CMOS technology IC supports power supply circuits in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,881 parts In-Stock

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Digiode

USA . 2,330 parts In-Stock

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AZTECH Wire

Italy . 266 parts In-Stock

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$21.160

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Component Stockers USA

USA . 467 parts In-Stock

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$99.990

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467

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TANS Electronics

Latvia . 3,806 parts In-Stock

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Problanco Electronics

Mexico . 3,169 parts In-Stock

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Kulean Microsystems

USA . 876 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 821 parts In-Stock

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Vigor

Singapore . 480 parts In-Stock

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Corohmni

South Africa . 476 parts In-Stock

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UHIMA Technologies

Türkiye . 341 parts In-Stock

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Microchip USA

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Overview

Discover the NCP300LSN185T1 by Onsemi, a top-of-the-line Power Management IC that guarantees quality and reliability. With a focus on automotive applications, this product provides exceptional power supply support with its advanced CMOS technology. Onsemi's commitment to excellence shines through in the small outline, thin profile package design, ensuring seamless integration into your projects. Experience the benefits of precise voltage control and optimal performance with the NCP300LSN185T1, delivering value and efficiency to customers seeking top-tier solutions in power management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to external factors, making the product reliable for long-term use.

Surface Mount: YES

Being surface mountable allows for easier and more efficient PCB assembly, saving time and effort during the manufacturing process.

Nominal Supply Voltage (Vsup): 1.5 V

The nominal supply voltage of 1.5V ensures compatibility with a wide range of applications, making it a versatile choice for power management.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, the product can withstand high temperatures, making it suitable for various environments and applications.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high noise immunity, making the product efficient and reliable for power management applications.

Technical Specifications

Power Management ICs NCP300LSN185T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 1.85V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.8V

Width (mm):

1.5 mm

Trade Compliance

NCP300LSN185T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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