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NCP300HSN27T1G

Onsemi

NCP300HSN27T1G by Onsemi

NCP300HSN27T1G by Onsemi is a Power Management IC with Vsup ranging from 0.8V to 10V, suitable for automotive applications. It features a small outline package style, dual terminal position, and operates in temperatures from -40 °C to 125°C. This CMOS technology IC has a matte tin finish and is surface mountable.

Median Price

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Lifecycle Status

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In-Stock Inventory

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Vyrian

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Mil-Aero Solutions, Inc.

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Prism Electronics

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Digiode

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Vigor

Singapore . 634 parts In-Stock

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$0.220

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AZTECH Wire

Italy . 190 parts In-Stock

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$12.520

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Component Stockers USA

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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Kulean Microsystems

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Metaverse IC Inc.

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Microchip USA

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Futuretech Components

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Overview

Discover the NCP300HSN27T1G by Onsemi, a superior Power Management IC that offers unparalleled quality and reliability. Manufactured by industry leader Onsemi, this product is designed to meet the highest standards in power management applications. With its small outline, thin profile package and dual terminal position, this IC is perfect for automotive applications where temperature fluctuations are common. Providing a nominal supply voltage of 1.5V and a wide range of power supplies from 0.8V to 10V, the NCP300HSN27T1G offers customers unmatched flexibility and efficiency in their power management needs. Experience the value and benefits of this top-of-the-line product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and protection for the internal components, ensuring durability and reliability.

Surface Mount: YES

Enables easy and efficient assembly onto circuit boards, saving time and labor costs.

Nominal Supply Voltage (Vsup): 1.5 V

Suitable for various low-power applications, offering flexibility in power requirements.

Number of Terminals: 5

Provides necessary connectivity for interfacing with other components in the system.

Maximum Operating Temperature: 125 °C

Ensures stable performance even in high-temperature environments, suitable for automotive applications.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions, making it versatile for a wide range of environments.

Technology: CMOS

Low power consumption and high noise immunity, efficient for power management circuits.

Technical Specifications

Power Management ICs NCP300HSN27T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.7V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.7V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP300HSN27T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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