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NCP2811AMTTXG

Onsemi

NCP2811AMTTXG by Onsemi

NCP2811AMTTXG by Onsemi is a 2-channel audio amplifier IC with a nominal bandwidth of 0.02 kHz. It operates in industrial temperature range (-40 to 85 °C) and supports supply voltage from 2.7V to 5V. This surface-mount chip carrier is ideal for audio and video amplification applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,471 parts In-Stock

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Digiode

USA . 2,410 parts In-Stock

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Flip Electronics

USA . 2,100 parts In-Stock

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AZTECH Wire

Italy . 1,165 parts In-Stock

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$10.730

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Component Stockers USA

USA . 225 parts In-Stock

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$99.990

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Perfect Parts

USA . 12,142 parts In-Stock

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TANS Electronics

Latvia . 6,996 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,534 parts In-Stock

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SupplyDigital Components

Austria . 4,367 parts In-Stock

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GreenTree Electronics

Israel . 1,960 parts In-Stock

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Problanco Electronics

Mexico . 1,707 parts In-Stock

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Corphita

USA . 1,357 parts In-Stock

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Kulean Microsystems

USA . 727 parts In-Stock

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Microchip USA

USA . 387 parts In-Stock

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UHIMA Technologies

Türkiye . 334 parts In-Stock

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Corohmni

South Africa . 158 parts In-Stock

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Overview

Unlock the power of crystal-clear audio with the NCP2811AMTTXG by Onsemi. As a leading manufacturer in the industry, Onsemi offers top-quality audio amplifiers perfect for a range of applications. With its compact square package shape and surface mount design, this amplifier is versatile and easy to integrate into any project. Elevate your audio experience with the NCP2811AMTTXG and enjoy unparalleled sound quality and performance. Trust Onsemi to deliver exceptional products that exceed expectations every time.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable makes this product easy to install and reduces the need for additional hardware, allowing for a more compact and efficient design.

No. of Functions: 2

Having multiple functions in a single package provides versatility and allows for more features to be integrated into the product without the need for separate components.

Package Shape: SQUARE

The square package shape helps in optimizing space utilization and ensures a more uniform and stable installation on PCBs.

General IC Type: AUDIO AMPLIFIER

Designed specifically for audio amplification, this product ensures high-quality sound output with minimal distortion, making it ideal for audio applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures the product can function reliably even under demanding conditions, providing longevity and stability in operation.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the product to function in a wide range of environments, making it suitable for various applications.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides good solderability and conductivity, ensuring reliable connections and optimal performance.

No. of Channels: 2

Having two channels allows for stereo sound output, enhancing the audio experience and providing a more immersive listening experience.

Nominal Bandwidth: 0.02 kHz

The wide nominal bandwidth ensures accurate and clear sound reproduction across the frequency spectrum, delivering high-fidelity audio output.

Maximum Supply Voltage (Vsup): 5 V

The high maximum supply voltage allows for greater output power and headroom, enabling the product to drive speakers with higher impedance and deliver louder sound.

Technical Specifications

Audio & Video Amplifiers NCP2811AMTTXG attributes and parameters. Explore more Audio & Video Amplifiers devices from Onsemi

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

JESD-30 Code:

S-XQCC-N12

JESD-609 Code:

e3

Length:

3 mm

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

12

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

.85 mm

Maximum Supply Voltage (Vsup):

5 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3 mm

Trade Compliance

NCP2811AMTTXG General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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