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MZP4734ARLG

Onsemi

MZP4734ARLG by Onsemi

The Onsemi MZP4734ARLG is a Zener diode with 5.6V nominal reference voltage, 45mA test current, and 5% voltage tolerance. It operates at up to 200 °C, has a dynamic impedance of 5 ohm, and can dissipate up to 3W power. Ideal for applications requiring precise voltage regulation in high-temperature environments.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Digiode

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AZTECH Wire

Italy . 755 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,475 parts In-Stock

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Kulean Microsystems

USA . 6,287 parts In-Stock

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SupplyDigital Components

Austria . 4,918 parts In-Stock

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TANS Electronics

Latvia . 4,133 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 1,250 parts In-Stock

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Corohmni

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UHIMA Technologies

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Overview

Discover the unparalleled quality and reliability of the Onsemi MZP4734ARLG Zener Diode. Manufactured by industry leader Onsemi, this diode offers precision performance for a wide range of applications. With a maximum voltage tolerance of 5% and a nominal reference voltage of 5.6V, this diode provides consistent and stable operation. Ideal for circuit protection and voltage regulation, the MZP4734ARLG delivers exceptional value and peace of mind to customers seeking top-notch electronic components. Experience the superior benefits and advantages of this Zener diode today.

Feature Benefit Bullets

Config: SINGLE

The single configuration allows for easy integration into various circuit designs.

Working Test Current: 45 mA

The high working test current ensures reliable performance in demanding applications.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance ensures accurate voltage regulation in circuits.

Maximum Operating Temperature: 200 °C

The high operating temperature range allows for use in various environments without risking overheating.

Maximum Dynamic Impedance: 5 ohm

The low dynamic impedance helps in stabilizing the output voltage of the diode.

Terminal Finish: TIN

The TIN terminal finish provides good solderability and ensures a secure connection.

Maximum Power Dissipation: 3 W

The high power dissipation capability makes this diode suitable for high-power applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering during assembly.

Diode Type: ZENER DIODE

Being a Zener diode, it has a specific breakdown voltage which makes it ideal for voltage regulation applications.

Nominal Reference Voltage: 5.6 V

The nominal reference voltage of 5.6V ensures stable voltage output within a specified range.

Technical Specifications

Zener Diodes MZP4734ARLG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

5 ohm

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

3 W

Nominal Reference Voltage:

5.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Maximum Voltage Tolerance:

5 %

Working Test Current:

45 mA

Trade Compliance

MZP4734ARLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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