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MZP4735AG

Onsemi

MZP4735AG by Onsemi

The Onsemi MZP4735AG Zener Diode has a nominal reference voltage of 6.2V, max power dissipation of 1W, and working test current of 41mA. Ideal for voltage regulation in electronic circuits with a max operating temperature of 200 °C.

Median Price

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Lifecycle Status

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1k+

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Digiode

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Austria . 4,404 parts In-Stock

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Kulean Microsystems

USA . 4,066 parts In-Stock

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TANS Electronics

Latvia . 1,576 parts In-Stock

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Problanco Electronics

Mexico . 1,541 parts In-Stock

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UHIMA Technologies

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Corohmni

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Overview

Unlock the power of precision with the Onsemi MZP4735AG Zener Diode. Manufactured by industry leader Onsemi, this high-quality component offers reliable performance and durability for a wide range of applications. From voltage regulation to surge suppression, this Zener diode is a versatile solution that provides excellent value and benefits to customers. Trust Onsemi for superior quality and innovation in electronic components.

Feature Benefit Bullets

Working Test Current: 41 mA

The high working test current allows for reliable performance under load, making this zener diode suitable for a wide range of applications.

Maximum Voltage Tolerance: 5%

The tight maximum voltage tolerance ensures consistent and accurate voltage regulation, making this zener diode a reliable choice for precision circuitry.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200 °C ensures that this zener diode can withstand harsh environmental conditions, making it suitable for industrial applications.

Maximum Dynamic Impedance: 2 ohm

The low maximum dynamic impedance ensures efficient voltage regulation and minimal power loss, making this zener diode energy-efficient and reliable.

Maximum Power Dissipation: 1 W

The high maximum power dissipation of 1 W allows for safe operation under high load conditions, making this zener diode suitable for power electronics applications.

Diode Type: ZENER DIODE

Being a zener diode, this product is specifically designed for voltage regulation and protection in electronic circuits, making it a reliable choice for applications requiring precise voltage control.

Nominal Reference Voltage: 6.2 V

The nominal reference voltage of 6.2 V provides a stable voltage reference point, making this zener diode ideal for applications requiring a fixed voltage output.

Technical Specifications

Zener Diodes MZP4735AG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

2 ohm

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

6.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Maximum Voltage Tolerance:

5 %

Working Test Current:

41 mA

Trade Compliance

MZP4735AG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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