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MZP4734A

Onsemi

MZP4734A by Onsemi

The Onsemi MZP4734A is a Zener diode with 5.6V nominal reference voltage, 45mA test current, and 5% voltage tolerance. It is used in applications requiring stable voltage regulation, such as power supplies and voltage references. With a max power dissipation of 1W and operating temperature range from -65 to 200 °C, it offers reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,122 parts In-Stock

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Digiode

USA . 1,101 parts In-Stock

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SupplyDigital Components

Austria . 8,169 parts In-Stock

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Problanco Electronics

Mexico . 7,075 parts In-Stock

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Kulean Microsystems

USA . 6,726 parts In-Stock

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TANS Electronics

Latvia . 5,479 parts In-Stock

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Corphita

USA . 1,528 parts In-Stock

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UHIMA Technologies

Türkiye . 383 parts In-Stock

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Corohmni

South Africa . 370 parts In-Stock

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Overview

Discover the MZP4734A by Onsemi, a top-quality Zener diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. With its superior design and construction, the MZP4734A ensures precise voltage regulation and protection against power surges. Experience the value and benefits this product brings to your projects, providing peace of mind and optimal performance. Choose the MZP4734A for all your Zener diode needs and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the zener diode, making it suitable for a variety of applications.

Working Test Current: 45 mA

With a high working test current of 45 mA, this zener diode can handle heavy loads and ensure stable performance.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance of 5% ensures precise voltage regulation, making it ideal for critical applications.

Maximum Operating Temperature: 200 °C

This zener diode can operate at high temperatures up to 200 °C, allowing for use in demanding environments.

Maximum Power Dissipation: 1 W

With a maximum power dissipation of 1 W, this zener diode can handle high power loads efficiently.

Nominal Reference Voltage: 5.6 V

The nominal reference voltage of 5.6 V ensures stable and reliable voltage regulation for various applications.

Technical Specifications

Zener Diodes MZP4734A attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

5 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

45 mA

Trade Compliance

MZP4734A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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