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MZP4729AG

Onsemi

MZP4729AG by Onsemi

The Onsemi MZP4729AG Zener Diode has a 3.6V nominal reference voltage, 5% max voltage tolerance, and 10 ohm max dynamic impedance. Ideal for applications requiring precise voltage regulation in circuits with a working test current of 69mA. Operating up to 200 °C, it offers a max power dissipation of 1W making it suitable for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,457 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 1,173 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,238 parts In-Stock

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Kulean Microsystems

USA . 7,883 parts In-Stock

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TANS Electronics

Latvia . 3,335 parts In-Stock

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Problanco Electronics

Mexico . 2,430 parts In-Stock

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Corphita

USA . 2,236 parts In-Stock

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SupplyDigital Components

Austria . 1,518 parts In-Stock

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UHIMA Technologies

Türkiye . 469 parts In-Stock

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Corohmni

South Africa . 301 parts In-Stock

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Overview

Unlock a world of precision with the MZP4729AG Zener Diode by Onsemi. Crafted with unmatched quality and expert engineering, this single-config diode offers a reliable solution for a variety of applications. With a maximum voltage tolerance of 5% and a nominal reference voltage of 3.6V, this powerful component ensures consistent performance in any setting. Trust in Onsemi's reputation for excellence and elevate your projects with the MZP4729AG Zener Diode today.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to use in circuits without needing to worry about multiple connections.

Working Test Current: 69 mA

This high working test current ensures the diode can handle a decent amount of current without malfunctioning.

Maximum Voltage Tolerance: 5 %

The low voltage tolerance of 5% ensures accurate voltage regulation in the circuit.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200 °C, this diode can withstand high-temperature environments without damage.

Maximum Dynamic Impedance: 10 ohm

The low dynamic impedance of 10 ohms helps in maintaining stable voltage regulation in the circuit.

Terminal Finish: TIN

TIN terminal finish provides good conductivity and makes it easy to solder the diode onto circuit boards.

Maximum Power Dissipation: 1 W

With a maximum power dissipation of 1W, this diode can handle high power dissipation without overheating.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C ensures the diode can withstand high-temperature soldering processes during assembly.

Diode Type: ZENER DIODE

Being a Zener diode, it provides precise voltage regulation and protection against voltage spikes in the circuit.

Nominal Reference Voltage: 3.6 V

The nominal reference voltage of 3.6V makes it suitable for applications requiring stable voltage regulation at this specific voltage level.

Technical Specifications

Zener Diodes MZP4729AG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

10 ohm

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

3.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Maximum Voltage Tolerance:

5 %

Working Test Current:

69 mA

Trade Compliance

MZP4729AG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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