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MZP4734ARR2

Onsemi

MZP4734ARR2 by Onsemi

The Onsemi MZP4734ARR2 is a Zener diode with 5.6V nominal reference voltage and 45mA test current. It has a max power dissipation of 1W, operating temperature range from -65 to 200 °C, and dynamic impedance of 5 ohm. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,612 parts In-Stock

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Vyrian

USA . 456 parts In-Stock

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Kulean Microsystems

USA . 7,435 parts In-Stock

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TANS Electronics

Latvia . 6,848 parts In-Stock

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SupplyDigital Components

Austria . 5,886 parts In-Stock

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Problanco Electronics

Mexico . 5,386 parts In-Stock

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Corphita

USA . 1,465 parts In-Stock

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Corohmni

South Africa . 114 parts In-Stock

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UHIMA Technologies

Türkiye . 89 parts In-Stock

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Overview

Unlock the power of precision with the Onsemi MZP4734ARR2 Zener Diode. Designed with quality materials and advanced technology, this diode offers reliable performance in a variety of applications. From voltage regulation to surge protection, this diode provides unmatched value and benefits to customers. Trust in Onsemi's reputation for excellence and choose the MZP4734ARR2 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the Zener diode.

Working Test Current: 45 mA

The high working test current of 45 mA allows the Zener diode to handle moderate levels of current with ease, making it suitable for a variety of applications.

Maximum Voltage Tolerance: 5%

The low maximum voltage tolerance of 5% ensures accurate and consistent voltage regulation, making this Zener diode reliable for precision circuitry.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200 °C allows the Zener diode to be used in harsh environmental conditions without the risk of overheating.

Maximum Power Dissipation: 1 W

The high maximum power dissipation of 1 watt enables the Zener diode to handle high power levels without damage, making it a reliable choice for demanding applications.

Nominal Reference Voltage: 5.6 V

The precise nominal reference voltage of 5.6 volts ensures accurate voltage regulation, making this Zener diode ideal for maintaining stable voltage levels in circuits.

Technical Specifications

Zener Diodes MZP4734ARR2 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

5 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

45 mA

Trade Compliance

MZP4734ARR2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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