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MZP4729ATAG

Onsemi

MZP4729ATAG by Onsemi

The Onsemi MZP4729ATAG is a Zener diode with 3.6V nominal reference voltage, 5% max voltage tolerance, and 10 ohm max dynamic impedance. It is used in applications requiring precise voltage regulation, such as power supplies and voltage references. With a max power dissipation of 1W and operating temperature range from -65 to 200 °C, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 981 parts In-Stock

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Vyrian

USA . 106 parts In-Stock

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TANS Electronics

Latvia . 7,836 parts In-Stock

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Problanco Electronics

Mexico . 6,187 parts In-Stock

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SupplyDigital Components

Austria . 5,828 parts In-Stock

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Corphita

USA . 646 parts In-Stock

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UHIMA Technologies

Türkiye . 645 parts In-Stock

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Kulean Microsystems

USA . 186 parts In-Stock

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Corohmni

South Africa . 178 parts In-Stock

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Overview

Unleash the power of precision with the MZP4729ATAG Zener Diode by Onsemi. Manufactured with top-quality materials and cutting-edge technology, this single-config Zener diode offers unmatched reliability and performance. Ideal for a wide range of applications, this diode ensures stable voltage regulation and protection against voltage spikes. Trust in Onsemi to deliver high-quality components that meet your needs and exceed your expectations. Upgrade your projects today with the MZP4729ATAG Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the diode, making it suitable for various applications.

Working Test Current: 69 mA

A high working test current of 69 mA ensures reliable performance and stability in various circuit conditions.

Maximum Voltage Tolerance: 5 %

The low maximum voltage tolerance of 5% ensures precise voltage regulation and protection against voltage spikes.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200 °C, this zener diode can withstand high temperature environments without degradation.

Nominal Reference Voltage: 3.6 V

The 3.6V nominal reference voltage offers stable and accurate voltage regulation for various electronic circuits.

Technical Specifications

Zener Diodes MZP4729ATAG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

10 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

69 mA

Trade Compliance

MZP4729ATAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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