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MZP4734AG

Onsemi

MZP4734AG by Onsemi

The Onsemi MZP4734AG is a Zener diode with a 5.6V nominal reference voltage, 45mA test current, and 5% voltage tolerance. It operates at up to 200 °C and has a max power dissipation of 1W. Ideal for applications requiring precise voltage regulation in harsh environments.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 952 parts In-Stock

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SupplyDigital Components

Austria . 7,444 parts In-Stock

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TANS Electronics

Latvia . 5,208 parts In-Stock

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Kulean Microsystems

USA . 4,584 parts In-Stock

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Problanco Electronics

Mexico . 1,505 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 445 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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Overview

Unleash the power of precision with the MZP4734AG Zener diode by Onsemi. Crafted with utmost quality and reliability, this single-configured diode offers a maximum voltage tolerance of 5% and can operate at temperatures up to 200 °C. Ideal for a wide range of applications, from voltage regulation to surge protection, this Zener diode provides customers with unmatched value and performance. Trust Onsemi's expertise and elevate your projects with the MZP4734AG today.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies installation and wiring, making it easy to use in various applications.

Working Test Current: 45 mA

With a working test current of 45 mA, this Zener diode can handle current fluctuations effectively while maintaining stable performance.

Maximum Voltage Tolerance: 5 %

The 5% maximum voltage tolerance ensures precise voltage regulation, making it a reliable choice for voltage reference applications.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200 °C allows this Zener diode to withstand challenging environmental conditions without compromising performance.

Maximum Dynamic Impedance: 5 ohm

With a low dynamic impedance of 5 ohms, this Zener diode can efficiently regulate voltage and provide stable output even under varying load conditions.

Maximum Power Dissipation: 1 W

The 1 W maximum power dissipation capability ensures the Zener diode can handle high power levels without overheating, enhancing its overall reliability.

Diode Type: ZENER DIODE

Being a Zener diode, it is designed specifically for voltage regulation and protection applications, offering superior performance compared to standard diodes.

Nominal Reference Voltage: 5.6 V

The 5.6V nominal reference voltage provides stable voltage regulation, making it suitable for various electronic circuits requiring a precise reference voltage.

Technical Specifications

Zener Diodes MZP4734AG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

5 ohm

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

5.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Maximum Voltage Tolerance:

5 %

Working Test Current:

45 mA

Trade Compliance

MZP4734AG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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