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SZ1SMB5924BT3G-VF01

Onsemi

SZ1SMB5924BT3G-VF01 by Onsemi

SZ1SMB5924BT3G-VF01 by Onsemi is a Zener diode with 7V reverse test voltage, 41.2mA working current, and 9.1V nominal reference voltage. Ideal for applications requiring precise voltage regulation in automotive electronics, it features a small outline package and operates b/w -65°C to 150°C.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 50,000 parts In-Stock

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Vyrian

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Digiode

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Nova Conductors

Japan . 300 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,223 parts In-Stock

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$0.080

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$0.113

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$0.108

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$0.113

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Semicontronic

India . 1,409 parts In-Stock

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$1.010

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$0.985

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$0.980

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Ampacity Inc.

Singapore . 370 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 205 parts In-Stock

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$18.365

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Problanco Electronics

Mexico . 8,367 parts In-Stock

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Continental Prestige Electronics

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Kulean Microsystems

USA . 3,808 parts In-Stock

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TANS Electronics

Latvia . 3,381 parts In-Stock

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Argo Parts USA

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SupplyDigital Components

Austria . 1,553 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 648 parts In-Stock

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Lucentia Tech

USA . 250 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Lithuania . 50 parts In-Stock

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Overview

Discover the SZ1SMB5924BT3G-VF01 by Onsemi, a top-tier Zener Diode that is setting new standards in quality and performance. With a focus on durability and reliability, Onsemi delivers a product that exceeds expectations. Ideal for a wide range of applications, this Zener Diode offers exceptional value with its precise voltage regulation and low reverse leakage current. Trust Onsemi to provide you with the cutting-edge technology you need for your projects. Elevate your work with the SZ1SMB5924BT3G-VF01 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability in various operating conditions.

Config: SINGLE

Having a single configuration simplifies the design and integration process.

Working Test Current: 41.2 mA

The high working test current allows for efficient and reliable performance.

Surface Mount: YES

Being surface mountable makes it easy to assemble and integrate into electronic circuits.

Maximum Reverse Current: 5 uA

Low reverse current ensures minimal power loss and increased efficiency.

Package Shape: RECTANGULAR

The rectangular shape makes it suitable for space-constrained applications.

Reverse Test Voltage: 7 V

The high reverse test voltage provides protection and reliable operation.

No. of Terminals: 2

With two terminals, it simplifies connectivity and installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is ideal for compact designs.

Maximum Voltage Tolerance: 5 %

Tight voltage tolerance ensures accurate and stable performance.

Maximum Knee Impedance: 500 ohm

Low knee impedance helps in maintaining a stable voltage regulation.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, it can withstand harsh environments.

Maximum Dynamic Impedance: 4 ohm

Low dynamic impedance contributes to efficient voltage regulation.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows for versatility in different environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good conductivity and durability.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit connectivity.

Maximum Power Dissipation: 0.55 W

High power dissipation capability ensures reliability under varying load conditions.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature prevents damage during soldering.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, it can withstand soldering processes effectively.

Reference Standard: AEC-Q101

Conforming to the AEC-Q101 standard ensures high reliability for automotive applications.

Diode Type: ZENER DIODE

Being a Zener diode, it provides stable and precise voltage regulation.

Maximum Forward Voltage (VF): 1.5 V

The low forward voltage drop minimizes power loss during forward conduction.

Nominal Reference Voltage: 9.1 V

The nominal reference voltage makes it suitable for specific voltage regulation requirements.

Technology: ZENER

Utilizing Zener technology guarantees accurate and stable voltage regulation.

Terminal Form: C BEND

The C bend terminal form facilitates easy mounting and connectivity.

Polarity: UNIDIRECTIONAL

Unidirectional polarity simplifies circuit design and integration.

Diode Element Material: SILICON

Using silicon as the diode element material ensures reliability and performance consistency.

Technical Specifications

Zener Diodes SZ1SMB5924BT3G-VF01 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

4 ohm

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Knee Impedance:

500 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

9.1 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

7 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

41.2 mA

Trade Compliance

SZ1SMB5924BT3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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