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MURD330T4

Onsemi

MURD330T4 by Onsemi

MURD330T4 by Onsemi is a single diode with ultra-fast recovery power for applications requiring high-speed performance. It features a max reverse recovery time of 0.05 us, max forward voltage of 0.92 V, and can handle a max output current of 3 A. Ideal for use in electronics operating at temperatures up to 175 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,031 parts In-Stock

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Vyrian

USA . 1,047 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Problanco Electronics

Mexico . 5,728 parts In-Stock

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SupplyDigital Components

Austria . 5,253 parts In-Stock

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TANS Electronics

Latvia . 4,064 parts In-Stock

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Kulean Microsystems

USA . 3,149 parts In-Stock

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Corphita

USA . 1,535 parts In-Stock

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Corohmni

South Africa . 457 parts In-Stock

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UHIMA Technologies

Türkiye . 355 parts In-Stock

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Overview

Experience the ultimate in power efficiency with the MURD330T4 diode by Onsemi. Crafted with precision and quality, this diode offers ultra-fast recovery power for a variety of applications. Say goodbye to slow and inefficient rectifiers – this diode boasts a maximum forward voltage of just 0.92V and a maximum output current of 3A, providing exceptional performance. With a peak reflow temperature of 235 °C and a maximum operating temperature of 175°C, this diode is built to withstand even the most demanding environments. Trust Onsemi's expertise in diodes and rectifiers to deliver superior quality and reliability. Elevate your projects with the MURD330T4 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and facilitating mass production.

Maximum Reverse Recovery Time: 0.05 us

Ensures fast switching, making it ideal for high frequency applications.

Package Shape: RECTANGULAR

Enables easy placement and mounting in a circuit.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, ensuring reliability in demanding environments.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for secure connections.

Maximum Output Current: 3 A

Capable of handling moderate power levels, suitable for various applications.

Technical Specifications

Diodes & Rectifiers MURD330T4 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.92 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURD330T4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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