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MURD550PFT4

Onsemi

MURD550PFT4 by Onsemi

MURD550PFT4 by Onsemi is a single diode with ultra-fast recovery time of 0.095 us. It operates b/w -65 to 175 °C and has a max output current of 5A. Ideal for applications requiring high-speed rectification, it features a peak reverse voltage of 520V and peak forward current of 75A.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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AZTECH Wire

Italy . 426 parts In-Stock

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Component Stockers USA

USA . 770 parts In-Stock

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Kepictronics

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RC Electronics

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Problanco Electronics

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SupplyDigital Components

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TANS Electronics

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Corphita

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Kulean Microsystems

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Corohmni

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Overview

Discover the MURD550PFT4 by Onsemi, a high-quality rectifier diode designed for ultra-fast recovery applications. With a maximum output current of 5A and a peak repetitive peak reverse voltage of 520V, this diode ensures reliable performance in a variety of electronic systems. Manufactured by Onsemi, a trusted leader in semiconductor technology, this diode offers customers exceptional value and benefits. Whether you're designing power supplies, motor drives, or battery chargers, the MURD550PFT4 provides the efficiency and reliability you need to bring your project to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.095 us

Ultra-fast recovery time ensures efficient operation and low power dissipation.

Application: ULTRA FAST RECOVERY

Suitable for applications where quick recovery time is crucial, such as high-frequency circuits.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it reliable in harsh environments.

Maximum Forward Voltage (VF): 0.98 V

Low forward voltage drop minimizes power loss and improves overall efficiency.

Maximum Output Current: 5 A

Capable of handling high output currents, suitable for various power applications.

Maximum Repetitive Peak Reverse Voltage: 520 V

Can withstand high reverse voltages, making it suitable for high-voltage applications.

Technical Specifications

Diodes & Rectifiers MURD550PFT4 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.98 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

520 V

Maximum Reverse Recovery Time:

.095 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURD550PFT4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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