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MURD315T4

Onsemi

MURD315T4 by Onsemi

The Onsemi MURD315T4 is a single rectifier diode with ultra-fast recovery power for applications requiring high-speed performance. It features a max reverse recovery time of 0.036 us, max forward voltage of 0.95 V, and a max output current of 3 A. Ideal for use in electronics where fast switching capabilities are essential.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,490 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

2,490

-

$0.238

$0.197

$0.176

DigiKey

USA . 2,490 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.300

2,490

-

-

-

$0.300

Verical

USA . 2,490 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.220

2,490

-

-

-

$0.220

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 179 parts In-Stock

1+ parts

$0.158

100+ parts

-

1k+ parts

-

10k+ parts

-

179

$0.158

-

-

-

Digiode

USA . 990 parts In-Stock

1+ parts

$0.185

100+ parts

-

1k+ parts

-

10k+ parts

-

990

$0.185

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 66 parts In-Stock

1+ parts

$0.158

100+ parts

-

1k+ parts

-

10k+ parts

-

66

$0.158

-

-

-

Corphita

USA . 2,365 parts In-Stock

1+ parts

$0.176

100+ parts

-

1k+ parts

-

10k+ parts

-

2,365

$0.176

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 28,185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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28,185

-

-

-

-

TANS Electronics

Latvia . 4,503 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

-

4,503

-

-

-

-

Continental Prestige Electronics

USA . 2,490 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.219

10k+ parts

-

2,490

-

-

$0.219

-

Kulean Microsystems

USA . 2,356 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,356

-

-

-

-

Kepictronics

USA . 2,026 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,026

-

-

-

-

Problanco Electronics

Mexico . 1,538 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,538

-

-

-

-

SupplyDigital Components

Austria . 1,244 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,244

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UHIMA Technologies

Türkiye . 20 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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20

-

-

-

-

Overview

Experience the next level of power efficiency and reliability with the MURD315T4 diode by Onsemi. Crafted with precision and quality in mind, this diode offers ultra-fast recovery power for a wide range of applications. With a maximum output current of 3A and a maximum reverse recovery time of 0.036 us, this diode is designed to optimize performance and enhance productivity. Trust in Onsemi's expertise in diodes & rectifiers to deliver top-notch quality and value to meet your unique needs. Elevate your projects with the MURD315T4 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Single configuration simplifies installation and circuit design, making it easier to use in various applications.

Surface Mount: YES

Surface mount design makes it easy to mount the diode on a PCB, saving space and allowing for automated assembly.

Maximum Reverse Recovery Time: 0.036 us

Ultra fast reverse recovery time ensures efficient operation and reduces power losses in the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into existing circuit designs and layouts.

No. of Terminals: 2

Two terminals provide a simple connection method, making it easier to incorporate the diode into the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for compact designs.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra fast recovery power applications, ensuring fast and efficient performance in power circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable operation in a wide range of environments and conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability, ensuring secure connections in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, making it easier to use in various applications.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and ensures correct polarity during installation.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for secure solder joints and reliable connections during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC power in various electronic circuits and applications.

Maximum Forward Voltage (VF): 0.95 V

Low maximum forward voltage minimizes power losses and ensures efficient power conversion in the circuit.

Maximum Output Current: 3 A

High maximum output current allows for reliable power delivery in the circuit without overheating the diode.

Terminal Form: GULL WING

Gull wing terminal form provides a secure connection and easy soldering during assembly, ensuring reliable performance.

Maximum Repetitive Peak Reverse Voltage: 150 V

High maximum repetitive peak reverse voltage protects the diode from voltage surges and ensures long-term reliability in the circuit.

Maximum Non Repetitive Peak Forward Current: 75 A

High maximum non repetitive peak forward current allows for short bursts of high power without damaging the diode.

Diode Element Material: SILICON

Silicon diode element material provides high conductivity and efficiency in converting electrical power, making it a reliable choice for various applications.

Technical Specifications

Diodes & Rectifiers MURD315T4 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Recovery Time:

.036 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURD315T4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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