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MURD530T4G

Onsemi

MURD530T4G by Onsemi

MURD530T4G by Onsemi is a single rectifier diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.05 us and a max output current of 5A. It operates in temperatures ranging from -65 to 175°C, making it suitable for applications requiring high-speed switching and low forward voltage drop.

Median Price

$0.882

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 46 parts In-Stock

1+ parts

$0.783

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$0.705

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46

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$0.705

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Chip1Stop

Japan . 46 parts In-Stock

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$1.170

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46

$1.170

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DigiKey

USA . 2,706 parts In-Stock

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$1.980

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$0.956

1k+ parts

$0.727

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$0.688

2,706

$1.980

$0.956

$0.727

$0.688

Flip Electronics (Authorized)

USA . 2,642 parts In-Stock

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Mouser Electronics

USA . 2,580 parts In-Stock

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$0.786

2,580

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$0.786

Rochester

USA . 2,500 parts In-Stock

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$0.978

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$0.812

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$0.724

2,500

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$0.978

$0.812

$0.724

Verical

USA . 46 parts In-Stock

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$0.705

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$0.705

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Distributors (In-Stock)

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Vyrian

USA . 2,242 parts In-Stock

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$0.543

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$0.543

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Digiode

USA . 172 parts In-Stock

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$0.744

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172

$0.744

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A&K Electronics

USA . 5,000 parts In-Stock

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Bristol Electronics

USA . 5,000 parts In-Stock

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Flip Electronics

USA . 2,642 parts In-Stock

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4 Star Electronics, Inc.

USA . 2,500 parts In-Stock

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Connect4Technologies Inc.

Canada . 2,315 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,241 parts In-Stock

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North Shore Components

USA . 2,155 parts In-Stock

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Elcom Components

USA . 1,866 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,785 parts In-Stock

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Dan-Mar Components

USA . 1,785 parts In-Stock

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EMSNET

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,686 parts In-Stock

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$0.477

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1,686

$0.477

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Corphita

USA . 2,432 parts In-Stock

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$0.705

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2,432

$0.705

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Corohmni

South Africa . 396 parts In-Stock

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$0.705

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396

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Perfect Parts

USA . 30,089 parts In-Stock

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Lixinc

USA . 7,494 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 3,172 parts In-Stock

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GreenTree Electronics

Israel . 2,494 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 2,405 parts In-Stock

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Continental Prestige Electronics

USA . 2,179 parts In-Stock

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$0.789

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Problanco Electronics

Mexico . 1,620 parts In-Stock

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Futuretech Components

Singapore . 749 parts In-Stock

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UHIMA Technologies

Türkiye . 278 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 106 parts In-Stock

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Overview

Boost your power applications with the MURD530T4G by Onsemi. This ultra-fast recovery rectifier diode offers unrivaled quality and reliability, thanks to its manufacturer's solid reputation in the industry. Whether you're working on high-speed circuits or power supplies, this diode is a game-changer. With a low forward voltage and high output current, it provides exceptional performance and efficiency. Say goodbye to downtime and hello to seamless operations with the MURD530T4G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the diode, making it suitable for various operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and installation, making it easier to integrate into different systems.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.05 us

Ultra-fast reverse recovery time ensures efficient performance and minimal power loss in high-speed applications.

Package Shape: RECTANGULAR

Rectangular shape facilitates proper alignment and mounting on PCBs, optimizing space utilization.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures reliable performance even in demanding environments.

Maximum Forward Voltage (VF): 0.8 V

Low forward voltage drop helps in reducing power losses and improving efficiency of the diode.

Technical Specifications

Diodes & Rectifiers MURD530T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURD530T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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