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MURD620CT1

Onsemi

MURD620CT1 by Onsemi

MURD620CT1 by Onsemi is a RECTIFIER DIODE with 200V VR, 6A IO, and 0.035us Trr. It operates up to 175 °C, with VF of 1.2V. Ideal for power supply applications due to its fast recovery time and high output current capacity.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,296 parts In-Stock

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Vyrian

USA . 174 parts In-Stock

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Component Stockers USA

USA . 402 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 18,059 parts In-Stock

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SupplyDigital Components

Austria . 8,010 parts In-Stock

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TANS Electronics

Latvia . 7,781 parts In-Stock

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Corphita

USA . 2,385 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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UHIMA Technologies

Türkiye . 755 parts In-Stock

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Problanco Electronics

Mexico . 254 parts In-Stock

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Kulean Microsystems

USA . 155 parts In-Stock

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Corohmni

South Africa . 127 parts In-Stock

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Overview

The MURD620CT1 by Onsemi is a top-of-the-line rectifier diode that offers unparalleled quality and reliability. As a trusted manufacturer in the industry, Onsemi ensures that this diode meets the highest standards for performance and durability. With a maximum output current of 6A and a peak repetitive peak reverse voltage of 200V, this diode is perfect for a wide range of applications. Whether you're working on power supplies, inverters, or battery chargers, the MURD620CT1 provides exceptional value and efficiency, making it the ideal choice for your next project.

Feature Benefit Bullets

Maximum Reverse Recovery Time: 0.035 us

This fast reverse recovery time ensures efficient and quick switching performance, making this product ideal for high-speed applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without sacrificing performance or reliability.

Terminal Finish: TIN LEAD

The TIN LEAD terminal finish provides good solderability and conductivity, ensuring a reliable electrical connection.

Peak Reflow Temperature: 235 C

The high peak reflow temperature allows for easy and efficient soldering during assembly, contributing to a robust and durable final product.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed specifically for converting alternating current (AC) to direct current (DC) with minimal voltage drop, making it efficient for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

The low forward voltage drop of 1.2V means less power loss and heat dissipation, making this diode energy-efficient and suitable for high-performance electronic devices.

Maximum Output Current: 6 A

With a high maximum output current of 6A, this diode can handle heavy loads without overheating, ensuring reliable operation in demanding applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high maximum repetitive peak reverse voltage rating of 200V allows this diode to withstand reverse voltage spikes or surges, making it robust and reliable in power supply and protection circuits.

Diode Element Material: SILICON

Silicon is a common semiconductor material known for its stability, efficiency, and high temperature resistance, making this diode reliable and suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers MURD620CT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Peak Reflow Temperature (C):

235

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trade Compliance

MURD620CT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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