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MURD320T4

Onsemi

MURD320T4 by Onsemi

The Onsemi MURD320T4 is a single rectifier diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.035 us and a max forward voltage of 0.95 V. It is designed for applications requiring high-speed switching capabilities at temperatures up to 175°C, making it suitable for various power electronics circuits.

Median Price

$1.540

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Component Electronics Inc.

Canada . 1,200 parts In-Stock

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$1.540

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$1.150

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Odintec Ltd.

Israel . 3,834 parts In-Stock

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Atlantic Semiconductor

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GES GmbH

Germany . 1,999 parts In-Stock

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SPM Sales

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Bristol Electronics

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Digiode

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J2 Sourcing AB

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Vyrian

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Velocity Electronics

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Florida Circuit

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PC Components Company LLC

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Sea View Technologies

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J & M Industries LLC

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ACDS - Activité Composants Distribution Service

France . 193 parts In-Stock

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Dan-Mar Components

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Microfarads

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Mil-Aero Solutions, Inc.

USA . 50 parts In-Stock

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50

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Nova Conductors

Japan . 50 parts In-Stock

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Semi Source

USA . 40 parts In-Stock

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Mentor Electronics Marketing, LLC

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NexGen Digital

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Distributors (Availability)

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Ampacity Inc.

Singapore . 798 parts In-Stock

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$0.010

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Corohmni

South Africa . 358 parts In-Stock

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AZTECH Wire

Italy . 359 parts In-Stock

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Problanco Electronics

Mexico . 3,315 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

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Austria . 2,586 parts In-Stock

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Component Connect

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Kulean Microsystems

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Assy Fe

Spain . 1,000 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 323 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Discover the exceptional performance of the MURD320T4 by Onsemi, a top-tier manufacturer known for their superior quality products. This diode is perfect for applications in ultra-fast recovery power systems, offering a maximum output current of 3A and a maximum repetitive peak reverse voltage of 200V. With a small outline package style and gull wing terminal form, this diode provides reliability and efficiency in a compact design. Trust Onsemi to deliver cutting-edge technology that maximizes value and performance for all your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various operating conditions.

Maximum Reverse Recovery Time: 0.035 us

Ultra fast recovery time ensures efficient performance and minimal energy loss.

Maximum Operating Temperature: 175 °C

Can operate in high temperature environments without compromising performance.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and solderability for easy installation.

Maximum Repetitive Peak Reverse Voltage: 200 V

Suitable for applications requiring high reverse voltage protection.

Technical Specifications

Diodes & Rectifiers MURD320T4 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURD320T4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-565-2568, 5961015652568

NIIN

015652568

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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