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MURD620CTG

Onsemi

MURD620CTG by Onsemi

MURD620CTG by Onsemi is a common cathode diode with ultra-fast recovery time of 0.035 us, suitable for applications requiring high-speed performance. It has a max output current of 3A and can handle a max repetitive peak reverse voltage of 200V, making it ideal for rectification tasks in electronic circuits. The diode's small outline package and surface mount capability make it convenient for compact designs where space is limited.

Median Price

$0.123

Lifecycle Status

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1k+

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Adafruit Industries

USA . 10 parts In-Stock

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Avnet

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Digiode

USA . 1,441 parts In-Stock

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Nova Conductors

Japan . 40 parts In-Stock

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TME

Poland . 35 parts In-Stock

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$1.384

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Component Electronics Inc.

Canada . 124 parts In-Stock

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$3.850

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$2.880

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Bristol Electronics

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LWI Electronics Inc

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Sogenti Electronics

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QIE Inc.

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Connector Distribution Corp

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LIBRA Elektronik GmbH

Germany . 48 parts In-Stock

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Right Parts Inc.

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Prism Electronics

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Sunrise Surplus Inc.

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Semi Source

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First Choice Components Inc.

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GSS - Global Semi Support

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Semicontronic

India . 1,250 parts In-Stock

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Ampacity Inc.

Singapore . 926 parts In-Stock

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Corphita

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$0.111

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$0.123

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Corohmni

South Africa . 305 parts In-Stock

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Aztec Data Supply Inc.

USA . 604 parts In-Stock

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Continental Prestige Electronics

USA . 3,147 parts In-Stock

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Argo Parts USA

USA . 186 parts In-Stock

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$0.666

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Netroflash

USA . 50 parts In-Stock

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$0.705

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$0.670

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$0.656

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AZTECH Wire

Italy . 131 parts In-Stock

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Lixinc

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TANS Electronics

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Authorized Procurement Solutions

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SupplyDigital Components

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Robosynatics

Brazil . 200 parts In-Stock

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Lucentia Tech

USA . 200 parts In-Stock

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iodParts Technologies Inc.

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Computer Components Inc. - USA

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Overview

Enhance your electronic projects with the MURD620CTG diode by Onsemi. This high-quality, ultra-fast recovery rectifier diode offers a compact design and reliable performance, making it perfect for a wide range of applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 200V, this diode ensures optimal functionality and efficiency. Trust in Onsemi's reputation for superior manufacturing to deliver a product that meets your needs and exceeds your expectations. Upgrade your projects today with the MURD620CTG diode and experience the benefits of quality engineering and innovative design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this diode lightweight and durable, ideal for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient current flow and better voltage regulation.

Surface Mount: YES

Being surface mountable, this diode is easy to install and saves space on the PCB.

Maximum Reverse Recovery Time: 0.035 us

With a fast reverse recovery time, this diode ensures minimal power loss and high efficiency in energy conversion.

Package Shape: RECTANGULAR

The rectangular shape of the package provides stability and ease of handling during assembly.

No. of Terminals: 2

The diode with 2 terminals allows for simple and straightforward connections in circuit applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it suitable for compact designs and space-constrained applications.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode is ideal for high-speed switching applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand heat and operate reliably in various environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures the diode remains functional even in cold conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and ensures stable connections for the diode.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation process and ensures proper alignment.

Case Connection: CATHODE

The cathode case connection allows for easy identification and proper orientation during installation.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this diode can withstand reflow soldering processes.

Peak Reflow Temperature °C: 260

Able to handle peak reflow temperatures of up to 260°C, making it suitable for reflow soldering techniques.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is ideal for converting AC to DC current and voltage regulation.

Maximum Forward Voltage (VF): 1.2 V

The low forward voltage drop of 1.2V ensures minimal power loss and high efficiency in energy conversion.

Maximum Output Current: 3 A

With a maximum output current of 3A, this diode can handle high power loads effectively.

Terminal Form: GULL WING

The gull-wing terminal form provides secure anchoring and ease of soldering during assembly.

No. of Elements: 2

Having 2 elements in the diode design allows for improved current conductivity and efficient operation.

Maximum Repetitive Peak Reverse Voltage: 200 V

With a maximum repetitive peak reverse voltage of 200V, this diode can handle high voltage applications with ease.

Maximum Non-Repetitive Peak Forward Current: 50 A

Capable of handling a non-repetitive peak forward current of 50A, making it suitable for high-current applications.

Diode Element Material: SILICON

Made from silicon, a durable and reliable semiconductor material known for its high conductivity and temperature resistance.

Technical Specifications

Diodes & Rectifiers MURD620CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURD620CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-611-3400, 5961016113400

NIIN

016113400

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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