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MURD320

Onsemi

MURD320 by Onsemi

MURD320 by Onsemi is a single rectifier diode with ultra-fast recovery power, suitable for applications requiring high-speed performance. With a max output current of 3A and a max repetitive peak reverse voltage of 200V, it operates at temperatures up to 175 °C. This surface-mount diode has a small outline package style and features a gull-wing terminal form for efficient connectivity.

Median Price

$0.400

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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DF Sales Co.

USA . 270 parts In-Stock

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DF Sales Co.

USA . 270 parts In-Stock

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Digiode

USA . 2,111 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 751 parts In-Stock

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A2Z Electronics, Inc.

USA . 666 parts In-Stock

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J & M Industries LLC

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Standard Data Resources

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Beltway Electronics Company

USA . 190 parts In-Stock

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Atlantic Semiconductor

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Manoshevitz Elec. Sales

Israel . 52 parts In-Stock

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Resion

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Corohmni

South Africa . 409 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Kulean Microsystems

USA . 2,138 parts In-Stock

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Problanco Electronics

Mexico . 1,556 parts In-Stock

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TANS Electronics

Latvia . 1,240 parts In-Stock

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 826 parts In-Stock

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Corphita

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Overview

Discover the MURD320 by Onsemi, a top-quality rectifier diode that offers ultra-fast recovery power for various applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 200V, this diode ensures reliable performance in a compact small outline package. Trust in Onsemi's reputation for excellence in manufacturing to provide you with a high-quality product that delivers value and benefits in your electronic projects. Whether you're working on power supplies, inverters, or motor drives, the MURD320 is the perfect choice to enhance efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for a variety of environments.

Surface Mount: YES

Allows for easy and quick installation on circuit boards, saving time and effort in the manufacturing process.

Maximum Reverse Recovery Time: 0.035 us

Ultra fast reverse recovery time ensures efficient operation and minimal switching losses.

Application: ULTRA FAST RECOVERY POWER

Designed specifically for high-speed power applications, making it ideal for use in devices requiring quick response times.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, ensuring reliability in demanding operating conditions.

Maximum Output Current: 3 A

Capable of handling high current loads, making it suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

Can withstand high voltage spikes, ensuring protection of the circuit.

Diode Element Material: SILICON

Silicon is a common and reliable material for diodes, providing good performance and durability.

Technical Specifications

Diodes & Rectifiers MURD320 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURD320 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-421-7727, 5961014217727, 5961-01-549-3902, 5961015493902

NIIN

014217727, 015493902

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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