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MURB1660CTT4

Onsemi

MURB1660CTT4 by Onsemi

MURB1660CTT4 by Onsemi is a common cathode diode with ultra-fast recovery power for applications requiring high efficiency. It features a max reverse recovery time of 0.06 us, max forward voltage of 1.2V, and can handle a max output current of 8A. Ideal for use in circuits where fast switching and low power dissipation are critical.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,347 parts In-Stock

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Vyrian

USA . 217 parts In-Stock

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ComSIT Distribution GmbH

Germany . 65 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,009 parts In-Stock

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TANS Electronics

Latvia . 5,380 parts In-Stock

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Kulean Microsystems

USA . 5,244 parts In-Stock

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SupplyDigital Components

Austria . 4,723 parts In-Stock

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Problanco Electronics

Mexico . 3,276 parts In-Stock

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Corphita

USA . 1,698 parts In-Stock

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UHIMA Technologies

Türkiye . 795 parts In-Stock

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Corohmni

South Africa . 493 parts In-Stock

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Overview

Discover the superior quality and reliability of the MURB1660CTT4 diode rectifier from Onsemi. With a common cathode configuration and ultra-fast recovery power, this small outline package offers high performance in a variety of applications. From electronics to automotive, this diode delivers efficient power management with a maximum output current of 8A and a peak repetitive peak reverse voltage of 600V. Trust Onsemi's expertise in semiconductor manufacturing to bring you the best value and benefits in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides sufficient insulation and protection for the diodes, ensuring durability and long-term performance.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easier circuit design and 2 elements provide redundancy in case of one element failure.

Maximum Reverse Recovery Time: 0.06 us

Ultra fast reverse recovery time ensures efficient operation and minimal energy loss in high-speed applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and compact placement in circuit boards.

Maximum Operating Temperature: 175 °C

High operating temperature tolerance makes this product suitable for a wide range of environmental conditions.

Maximum Power Dissipation: 3 W

With a high power dissipation capability, this product can handle high power applications without overheating.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop ensures efficient energy conversion and minimal heat generation during operation.

Maximum Output Current: 8 A

High output current rating allows for use in applications requiring high current capacity.

Maximum Repetitive Peak Reverse Voltage: 600 V

High reverse voltage rating makes this product suitable for use in high voltage applications.

Diode Element Material: SILICON

Silicon diodes are known for their reliability, efficiency, and high temperature tolerance, making this product a reliable choice.

Technical Specifications

Diodes & Rectifiers MURB1660CTT4 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURB1660CTT4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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