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MURB1620CTRG

Onsemi

MURB1620CTRG by Onsemi

MURB1620CTRG by Onsemi is a common anode diode with ultra-fast soft recovery. It has a max output current of 8A and a max repetitive peak reverse voltage of 200V. Ideal for applications requiring high-speed switching and low power loss in compact designs.

Median Price

$1.331

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 98 parts In-Stock

1+ parts

$1.331

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98

$1.331

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Chip Stock

USA . 9,450 parts In-Stock

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9,450

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Vyrian

USA . 5,674 parts In-Stock

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5,674

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Digiode

USA . 494 parts In-Stock

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494

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Distributors (Availability)

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.070

100+ parts

$0.067

1k+ parts

$0.067

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-

60

$0.070

$0.067

$0.067

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Aztec Data Supply Inc.

USA . 540 parts In-Stock

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$0.194

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540

$0.194

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Semicontronic

India . 621 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

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621

$1.010

$0.985

$0.980

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Corohmni

South Africa . 207 parts In-Stock

1+ parts

$1.304

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207

$1.304

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Continental Prestige Electronics

USA . 4,735 parts In-Stock

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$1.331

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$1.304

4,735

$1.331

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$1.304

Argo Parts USA

USA . 986 parts In-Stock

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$1.331

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986

$1.331

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Ampacity Inc.

Singapore . 1,473 parts In-Stock

1+ parts

$2.010

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1,473

$2.010

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AZTECH Wire

Italy . 668 parts In-Stock

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$7.147

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668

$7.147

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Component Stockers USA

USA . 550 parts In-Stock

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$99.990

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550

$99.990

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Lixinc

USA . 11,461 parts In-Stock

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RC Electronics

USA . 11,034 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,079 parts In-Stock

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SupplyDigital Components

Austria . 5,610 parts In-Stock

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5,610

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TANS Electronics

Latvia . 3,740 parts In-Stock

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3,740

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Problanco Electronics

Mexico . 3,644 parts In-Stock

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Perfect Parts

USA . 2,237 parts In-Stock

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Corphita

USA . 793 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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100

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Lucentia Tech

USA . 100 parts In-Stock

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100+ parts

$3.292

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$3.292

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$3.292

100

-

$3.292

$3.292

$3.292

Kepictronics

USA . 87 parts In-Stock

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87

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iodParts Technologies Inc.

India . 40 parts In-Stock

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40

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UHIMA Technologies

Türkiye . 36 parts In-Stock

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Overview

Upgrade your electronic devices with the MURB1620CTRG by Onsemi. This high-quality diode offers ultra-fast soft recovery, making it perfect for a wide range of applications. With Onsemi's reputation for excellence in manufacturing and the value this product provides, you can trust that your electronics will perform at their best. Experience the benefits of fast recovery time and high output current with the MURB1620CTRG, setting your devices apart from the rest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring long-lasting performance.

Config: COMMON ANODE, 2 ELEMENTS

Allows for efficient circuit design and connection, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.085 us

Ultra-fast soft recovery time ensures minimal power loss and high efficiency in switching circuits.

Package Shape: RECTANGULAR

Space-saving design that fits well in compact electronic devices.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, suitable for industrial and automotive applications.

Peak Reflow Temperature °C: 260

Can endure high-temperature soldering processes without damage.

Maximum Forward Voltage (VF): 1.1 V

Low forward voltage drop for efficient power conversion.

Maximum Output Current: 8 A

Can handle high current loads, making it suitable for power supply applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

Suitable for use in circuits with higher voltage requirements.

Technical Specifications

Diodes & Rectifiers MURB1620CTRG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST SOFT RECOVERY

Case Connection:

ANODE

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.085 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURB1620CTRG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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