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MURB1660CT

Onsemi

MURB1660CT by Onsemi

MURB1660CT by Onsemi is a common cathode diode with ultra-fast recovery power for applications requiring high efficiency. It features a max reverse recovery time of 0.06 us, max forward voltage of 1.5V, and max output current of 8A. Ideal for use in circuits where fast switching speeds are crucial.

Median Price

$0.170

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 3,000 parts In-Stock

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$0.170

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$0.149

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$0.149

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Vyrian

USA . 348 parts In-Stock

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Digiode

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ACDS - Activité Composants Distribution Service

France . 203 parts In-Stock

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ComSIT Distribution GmbH

Germany . 48 parts In-Stock

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Zilex Electronics Inc.

Canada . 25 parts In-Stock

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Microchip USA

USA . 197 parts In-Stock

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$3.504

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

Mexico . 5,647 parts In-Stock

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SupplyDigital Components

Austria . 3,624 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Kulean Microsystems

USA . 1,420 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 556 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 308 parts In-Stock

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Corohmni

South Africa . 192 parts In-Stock

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Overview

Enhance your power management solutions with the MURB1660CT by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are designed for ultra-fast recovery power applications. With a maximum output current of 8A and a maximum repetitive peak reverse voltage of 600V, this common cathode diode offers superior performance and reliability. Experience the benefits of fast recovery time and high power dissipation in a compact, surface-mount package. Trust Onsemi to provide you with the innovative solutions you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various environments and applications.

Maximum Reverse Recovery Time: 0.06 us

Ultra fast recovery time ensures efficient performance and fast switching capabilities.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it reliable in demanding operating conditions.

Maximum Power Dissipation: 3 W

Can handle high power levels without overheating, ensuring reliability and longevity.

Maximum Forward Voltage (VF): 1.5 V

Low forward voltage drop reduces power loss and increases efficiency.

Maximum Output Current: 8 A

Capable of handling high current loads, making it suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

Can withstand high reverse voltages, making it suitable for high voltage applications.

Technical Specifications

Diodes & Rectifiers MURB1660CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURB1660CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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