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MURB1620CTG

Onsemi

MURB1620CTG by Onsemi

MURB1620CTG by Onsemi is a common cathode diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.035 us and a max output current of 8A. This small outline rectifier diode has a package body material of plastic/epoxy and is suitable for applications requiring high-speed switching capabilities at temperatures ranging from -65 to 175°C.

Median Price

$1.148

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 650 parts In-Stock

1+ parts

$1.148

100+ parts

$1.080

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$0.976

10k+ parts

$0.976

650

$1.148

$1.080

$0.976

$0.976

Distributors (In-Stock)

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Digiode

USA . 2,494 parts In-Stock

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$1.091

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2,494

$1.091

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Nova Conductors

Japan . 28 parts In-Stock

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$1.310

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Vyrian

USA . 2,755 parts In-Stock

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Chip Stock

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Inventory MP

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175

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Bristol Electronics

USA . 150 parts In-Stock

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Connect4Technologies Inc.

Canada . 80 parts In-Stock

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80

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Rotakorn

Sweden . 32 parts In-Stock

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Sensible Micro Corp

USA . 31 parts In-Stock

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PC Components Company LLC

USA . 6 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,436 parts In-Stock

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$0.050

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1,436

$0.050

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Argo Parts USA

USA . 1,119 parts In-Stock

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$0.950

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1,119

$0.950

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.969

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$0.969

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$0.969

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60

$0.969

$0.969

$0.969

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Semicontronic

India . 304 parts In-Stock

1+ parts

$0.980

100+ parts

$0.956

1k+ parts

$0.951

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304

$0.980

$0.956

$0.951

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Ampacity Inc.

Singapore . 292 parts In-Stock

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$0.980

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292

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Corphita

USA . 201 parts In-Stock

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$1.034

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$1.034

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Corohmni

South Africa . 252 parts In-Stock

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$1.148

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Netroflash

USA . 2,000 parts In-Stock

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$1.310

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$1.244

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$1.218

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$1.310

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$1.244

$1.218

AZTECH Wire

Italy . 717 parts In-Stock

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$8.206

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717

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Lixinc

USA . 19,770 parts In-Stock

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Kulean Microsystems

USA . 7,106 parts In-Stock

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SupplyDigital Components

Austria . 6,767 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 3,660 parts In-Stock

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Assy Fe

Spain . 1,311 parts In-Stock

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Kepictronics

USA . 800 parts In-Stock

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Continental Prestige Electronics

USA . 740 parts In-Stock

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$0.949

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UHIMA Technologies

Türkiye . 256 parts In-Stock

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Robosynatics

Brazil . 250 parts In-Stock

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$2.603

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$2.603

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$2.603

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$2.603

$2.603

$2.603

Lucentia Tech

USA . 250 parts In-Stock

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$2.603

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$2.603

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$2.603

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$2.603

$2.603

$2.603

TANS Electronics

Latvia . 138 parts In-Stock

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iodParts Technologies Inc.

India . 75 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of Onsemi with the MURB1620CTG diode rectifier. This small outline, common cathode device boasts ultra-fast recovery power, making it ideal for a wide range of applications. From consumer electronics to industrial machinery, this diode offers exceptional performance and efficiency. With a maximum operating temperature of 175°C and a peak forward voltage of 0.975V, the MURB1620CTG is a top choice for demanding projects where precision and durability are paramount. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diodes, ensuring reliability and durability.

Maximum Forward Voltage (VF): 0.975 V

Low forward voltage drop helps in efficient power conversion and reduces power loss.

Maximum Output Current: 8 A

Capable of handling high currents, making it suitable for power applications.

Maximum Reverse Recovery Time: 0.035 us

Fast reverse recovery time ensures quick switching and high efficiency in power conversion.

Maximum Repetitive Peak Reverse Voltage: 200 V

Can handle high reverse voltages safely, providing protection to the circuit.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery in power applications, ensuring smooth operation.

Technical Specifications

Diodes & Rectifiers MURB1620CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.975 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURB1620CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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