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MURB1620CTT4

Onsemi

MURB1620CTT4 by Onsemi

MURB1620CTT4 by Onsemi is a common cathode diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.035 us and a max output current of 8A. This small outline rectifier diode has a package body material of plastic/epoxy and is suitable for applications requiring high-speed performance at temperatures up to 175 °C.

Median Price

$0.853

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 1,490 parts In-Stock

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$0.853

100+ parts

$0.895

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$0.844

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1,490

$0.853

$0.895

$0.844

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Chip Stock

USA . 30,790 parts In-Stock

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Magnum Semiconductors LLP

India . 2,400 parts In-Stock

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Digiode

USA . 1,384 parts In-Stock

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Odintec Ltd.

Israel . 762 parts In-Stock

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PC Components Company LLC

USA . 699 parts In-Stock

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699

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Bristol Electronics

USA . 507 parts In-Stock

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507

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 500 parts In-Stock

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500

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LIBRA Elektronik GmbH

Germany . 464 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 391 parts In-Stock

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391

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Dan-Mar Components

USA . 391 parts In-Stock

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Vyrian

USA . 118 parts In-Stock

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Semi Source

USA . 96 parts In-Stock

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Elcom Components

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4

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Distributors (Availability)

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Corohmni

South Africa . 57 parts In-Stock

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$0.853

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57

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Component Stockers USA

USA . 4,785 parts In-Stock

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$1.580

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$1.500

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$1.450

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4,785

$1.580

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$1.450

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Ampacity Inc.

Singapore . 1,486 parts In-Stock

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$3.010

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$3.010

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RC Electronics

USA . 26,000 parts In-Stock

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$1.410

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$1.330

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$1.300

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$1.410

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$1.300

Kulean Microsystems

USA . 3,645 parts In-Stock

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3,645

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,883 parts In-Stock

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Problanco Electronics

Mexico . 2,178 parts In-Stock

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Corphita

USA . 1,873 parts In-Stock

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Assy Fe

Spain . 1,600 parts In-Stock

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Kepictronics

USA . 1,100 parts In-Stock

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UHIMA Technologies

Türkiye . 930 parts In-Stock

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SupplyDigital Components

Austria . 527 parts In-Stock

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527

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Overview

Discover the power and precision of the MURB1620CTT4 by Onsemi. Crafted with quality and expertise, this diode offers unparalleled performance in ultra-fast recovery power applications. With a common cathode configuration and two elements, this small outline package delivers a maximum output current of 8A and peak reverse voltage of 200V. Whether you're seeking efficiency in your electronics or reliability in your devices, trust Onsemi to provide the cutting-edge solutions you need. Elevate your projects with the MURB1620CTT4 and experience the value and benefits that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for long-term use in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy circuit design and integration, making it convenient for electronics projects.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Recovery Time: 0.035 us

Ensures fast switching performance, which is crucial in applications requiring quick response times.

Package Shape: RECTANGULAR

Optimizes space utilization on the PCB, ideal for compact electronic devices.

No. of Terminals: 2

Simplifies connectivity and installation process, suitable for straightforward circuit designs.

Package Style (Meter): SMALL OUTLINE

Enhances compatibility with various electronic components and layouts, allowing for versatile application.

Application: ULTRA FAST RECOVERY POWER

Designed for high-speed and high-power applications, making it a reliable choice for demanding electronic systems.

Maximum Operating Temperature: 175 °C

Provides a wide temperature range for operation, ensuring reliability in various environmental conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Facilitates soldering and ensures good electrical conductivity for stable performance.

Terminal Position: SINGLE

Simplifies installation and connection, making it user-friendly for both DIY enthusiasts and professionals.

Case Connection: CATHODE

Provides a clear polarity indication for proper installation, reducing the risk of circuit errors.

Maximum Power Dissipation: 3 W

Supports high-power applications without overheating, ensuring long-term reliability.

Maximum Repetitive Peak Reverse Voltage: 200 V

Offers adequate voltage protection, suitable for a wide range of electronic devices and systems.

Diode Element Material: SILICON

Provides excellent performance and reliability, making it a popular choice for electronic components.

Technical Specifications

Diodes & Rectifiers MURB1620CTT4 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.975 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURB1620CTT4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-568-3197, 5961015683197

NIIN

015683197

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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