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MURB1620CT

Onsemi

MURB1620CT by Onsemi

MURB1620CT by Onsemi is a common cathode diode with ultra-fast recovery power for applications requiring high efficiency. It features a max reverse recovery time of 0.035 us, max forward voltage of 0.975 V, and can handle a max output current of 8 A. Ideal for surface mount applications with its small outline package style.

Median Price

$1.090

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,655 parts In-Stock

1+ parts

$1.090

100+ parts

$0.445

1k+ parts

$0.321

10k+ parts

$0.242

2,655

$1.090

$0.445

$0.321

$0.242

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 10 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

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$0.500

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10

$0.770

$0.580

$0.500

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Digiode

USA . 426 parts In-Stock

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$0.798

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Vyrian

USA . 86,895 parts In-Stock

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$0.840

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$0.840

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Chip Stock

USA . 30,800 parts In-Stock

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Q Components

USA . 11,370 parts In-Stock

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Legend Electronics Inc.

USA . 5,288 parts In-Stock

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M&R Communications

USA . 1,318 parts In-Stock

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Prism Electronics

USA . 342 parts In-Stock

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342

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J2 Sourcing AB

Sweden . 200 parts In-Stock

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200

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ComSIT Distribution GmbH

Germany . 127 parts In-Stock

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PC Components Company LLC

USA . 98 parts In-Stock

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Rebound Electronics

UK . 90 parts In-Stock

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Atlantic Semiconductor

USA . 77 parts In-Stock

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Lakeland Logistics Inc

USA . 50 parts In-Stock

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50

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Resion

USA . 48 parts In-Stock

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Bristol Electronics

USA . 45 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 44 parts In-Stock

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GES GmbH

Germany . 43 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 23 parts In-Stock

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Odintec Ltd.

Israel . 7 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 543 parts In-Stock

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$0.756

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543

$0.756

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Corohmni

South Africa . 217 parts In-Stock

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$0.770

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217

$0.770

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,865 parts In-Stock

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SupplyDigital Components

Austria . 7,460 parts In-Stock

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Kulean Microsystems

USA . 6,928 parts In-Stock

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Problanco Electronics

Mexico . 5,266 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 3,492 parts In-Stock

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UHIMA Technologies

Türkiye . 855 parts In-Stock

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Perfect Parts

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Kepictronics

USA . 58 parts In-Stock

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Overview

Discover the power of the MURB1620CT by Onsemi, a high-quality diode and rectifier that offers unmatched performance in ultra-fast recovery power applications. With a common cathode configuration and two elements, this product is designed for efficiency and reliability. Experience the benefits of its small outline package body material and gull wing terminal form, making it ideal for surface mount applications. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and unlock the potential of your projects with the MURB1620CT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection, making the diodes long-lasting and resistant to damage.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easier circuit design and better control of power flow.

Surface Mount: YES

Surface mount capability enables easy and efficient installation on PCBs, saving space and simplifying assembly.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast reverse recovery time ensures minimal energy loss and efficient operation of the diodes.

Package Shape: RECTANGULAR

Rectangular shape for the package provides easy mounting and integration into various electronic systems.

No. of Terminals: 2

2 terminals simplify connection and reduce complexity in the circuit layout.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and enables high-density mounting on PCBs.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, ensuring high performance and efficiency in power systems.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance allows for reliable operation in various environmental conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and electrical conductivity for secure connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and integration into circuits.

Case Connection: CATHODE

Cathode case connection offers efficient power flow and helps in proper circuit functioning.

Maximum Power Dissipation: 3 W

High power dissipation capacity allows the diodes to handle significant power loads without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

30 seconds maximum time at peak reflow temperature ensures proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 235

High peak reflow temperature enables secure and robust solder joints for long-term performance.

Diode Type: RECTIFIER DIODE

Rectifier diode type for efficient conversion of AC to DC power in electronic circuits.

Maximum Forward Voltage (VF): 0.975 V

Low maximum forward voltage drop ensures minimal power loss and efficient energy conversion in the circuit.

Maximum Output Current: 8 A

High maximum output current rating allows the diodes to handle significant power loads with ease.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable connections for efficient power transmission.

No. of Elements: 2

2 diode elements provide versatility and flexibility in circuit design and function.

Maximum Repetitive Peak Reverse Voltage: 200 V

High maximum repetitive peak reverse voltage rating offers protection against reverse voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 100 A

High non-repetitive peak forward current rating ensures the diodes can handle transient overcurrent conditions without damage.

Diode Element Material: SILICON

Silicon diode element material provides high conductivity and efficiency in energy conversion applications.

Technical Specifications

Diodes & Rectifiers MURB1620CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.975 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURB1620CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-577-1956, 5961015771956

NIIN

015771956

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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