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MURB1660CTT4G

Onsemi

MURB1660CTT4G by Onsemi

MURB1660CTT4G by Onsemi is a common cathode diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.06 us and a max output current of 8A. This rectifier diode has a package style of small outline and is suitable for applications requiring high-speed switching capabilities at temperatures ranging from -65 to 175°C.

Median Price

$0.984

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,924 parts In-Stock

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$0.984

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4,924

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$0.984

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Arrow

USA . 2,400 parts In-Stock

1+ parts

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$0.888

10k+ parts

$0.870

2,400

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$0.888

$0.870

Verical

USA . 2,400 parts In-Stock

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$1.170

10k+ parts

$1.044

2,400

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$1.170

$1.044

Future Electronics

Canada . 800 parts In-Stock

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$0.970

10k+ parts

$0.900

800

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$0.970

$0.900

Rochester

USA . 2 parts In-Stock

1+ parts

-

100+ parts

$1.080

1k+ parts

$0.896

10k+ parts

$0.799

2

-

$1.080

$0.896

$0.799

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,186 parts In-Stock

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$0.879

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2,186

$0.879

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Nova Conductors

Japan . 650 parts In-Stock

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$1.266

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650

$1.266

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Bristol Electronics

USA . 195 parts In-Stock

1+ parts

$2.100

100+ parts

$1.302

1k+ parts

$1.050

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195

$2.100

$1.302

$1.050

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Chip Stock

USA . 27,473 parts In-Stock

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Component Sense

UK . 10,355 parts In-Stock

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Vyrian

USA . 1,669 parts In-Stock

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1,669

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Sensible Micro Corp

USA . 1,480 parts In-Stock

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1,480

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NAC Semi

USA . 800 parts In-Stock

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$1.410

10k+ parts

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800

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$1.410

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,950 parts In-Stock

1+ parts

$0.027

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4,950

$0.027

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Ampacity Inc.

Singapore . 1,565 parts In-Stock

1+ parts

$0.750

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1,565

$0.750

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Semicontronic

India . 1,341 parts In-Stock

1+ parts

$0.750

100+ parts

$0.731

1k+ parts

$0.728

10k+ parts

-

1,341

$0.750

$0.731

$0.728

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Corphita

USA . 465 parts In-Stock

1+ parts

$0.832

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465

$0.832

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Corohmni

South Africa . 257 parts In-Stock

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$0.888

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257

$0.888

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Argo Parts USA

USA . 1,152 parts In-Stock

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$1.050

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1,152

$1.050

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Continental Prestige Electronics

USA . 1,777 parts In-Stock

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$1.970

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$1.270

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1,777

$1.970

$1.270

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Perfect Parts

USA . 92,380 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,752 parts In-Stock

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Kulean Microsystems

USA . 6,516 parts In-Stock

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TANS Electronics

Latvia . 5,079 parts In-Stock

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SupplyDigital Components

Austria . 3,906 parts In-Stock

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Problanco Electronics

Mexico . 2,246 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$1.241

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$1.203

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$1.177

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$1.177

Authorized Procurement Solutions

USA . 1,600 parts In-Stock

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Kepictronics

USA . 800 parts In-Stock

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800

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Eastek

USA . 800 parts In-Stock

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800

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GreenTree Electronics

Israel . 800 parts In-Stock

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800

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 319 parts In-Stock

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319

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Overview

Discover the quality and reliability of the MURB1660CTT4G by Onsemi, a top-tier manufacturer in the field of diodes and rectifiers. This common cathode diode offers ultra-fast recovery power with a maximum forward voltage of 1.2V and output current of 8A, making it perfect for a wide range of applications. From industrial machinery to consumer electronics, this small outline package delivers exceptional performance and efficiency. Trust Onsemi for cutting-edge technology that enhances your products and maximizes value for your customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the diodes, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.06 us

Ultra fast reverse recovery time allows for efficient switching and reduces power loss, making the product suitable for high-speed applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, making it reliable in various operating conditions.

Peak Reflow Temperature °C: 260

The diode can undergo peak reflow process at high temperatures, ensuring secure solder joints during assembly.

Maximum Output Current: 8 A

With a high maximum output current, this diode can handle heavy loads without overheating, making it ideal for power applications.

Technical Specifications

Diodes & Rectifiers MURB1660CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURB1660CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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