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MURB1660CTG

Onsemi

MURB1660CTG by Onsemi

MURB1660CTG by Onsemi is a common cathode diode with ultra-fast recovery power for applications requiring high-speed performance. Featuring a max reverse recovery time of 0.06 us, it can handle up to 8A output current and has a max repetitive peak reverse voltage of 600V. This small outline rectifier diode operates b/w -65 °C to 175°C, making it suitable for various electronic devices.

Median Price

$1.502

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 1,150 parts In-Stock

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$1.563

10k+ parts

$1.400

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$1.563

$1.400

Rochester

USA . 47 parts In-Stock

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$1.440

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$1.200

10k+ parts

$1.070

47

-

$1.440

$1.200

$1.070

Distributors (In-Stock)

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Digiode

USA . 1,591 parts In-Stock

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$1.026

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Vyrian

USA . 4,393 parts In-Stock

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Chip Stock

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PC Components Company LLC

USA . 22 parts In-Stock

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Bristol Electronics

USA . 22 parts In-Stock

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LWI Electronics Inc

India . 20 parts In-Stock

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North Shore Components

USA . 5 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,513 parts In-Stock

1+ parts

$0.920

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5,513

$0.920

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Corphita

USA . 1,662 parts In-Stock

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$0.972

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$0.972

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Corohmni

South Africa . 330 parts In-Stock

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$1.080

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330

$1.080

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Component Stockers USA

USA . 2,019 parts In-Stock

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$1.240

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$1.180

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$1.140

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2,019

$1.240

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$1.140

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AZTECH Wire

Italy . 163 parts In-Stock

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$16.510

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,980 parts In-Stock

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Problanco Electronics

Mexico . 5,813 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 4,359 parts In-Stock

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Kulean Microsystems

USA . 3,693 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,692 parts In-Stock

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UHIMA Technologies

Türkiye . 809 parts In-Stock

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Futuretech Components

Singapore . 149 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the MURB1660CTG diode rectifier. Designed for ultra-fast recovery power applications, this common cathode diode offers a peak repetitive reverse voltage of 600V and a maximum output current of 8A. With a small outline package style and matte tin terminal finish, this diode is ideal for a wide range of electronic devices. Trust in Onsemi for top-notch performance and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the diode, ensuring long-lasting performance.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient current flow and easy integration into circuits with multiple elements.

Maximum Reverse Recovery Time: 0.06 us

Ensures fast switching and high efficiency in power conversion applications.

Maximum Power Dissipation: 3 W

Can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, allowing for use in a wide range of environmental conditions.

Diode Type: RECTIFIER DIODE

Specifically designed for converting AC to DC, making it ideal for power supply applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

Provides a high level of voltage protection, ensuring the diode can handle large reverse voltages.

Technical Specifications

Diodes & Rectifiers MURB1660CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURB1660CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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