Loading...

MR856FFG

Onsemi

MR856FFG by Onsemi

MR856FFG by Onsemi is a single rectifier diode with a max forward voltage of 1.25V and output current of 3A. With a max reverse recovery time of 0.3us, it operates at temperatures up to 150 °C. Ideal for efficiency applications, this diode has a peak repetitive reverse voltage of 600V and non-repetitive forward current of 100A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,917 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,917

-

-

-

-

Vyrian

USA . 811 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

811

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 6,809 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,809

-

-

-

-

Kulean Microsystems

USA . 2,885 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,885

-

-

-

-

Corphita

USA . 2,487 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,487

-

-

-

-

SupplyDigital Components

Austria . 2,372 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,372

-

-

-

-

TANS Electronics

Latvia . 1,521 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,521

-

-

-

-

UHIMA Technologies

Türkiye . 224 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

224

-

-

-

-

Corohmni

South Africa . 112 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

112

-

-

-

-

Overview

Enhance the efficiency of your electronic applications with the MR856FFG diode by Onsemi. Manufactured with top-quality materials, this rectifier diode offers a quick maximum reverse recovery time of 0.3 us, making it ideal for high-speed operations. With a maximum operating temperature of 150 °C and a maximum output current of 3A, this diode ensures reliable performance under various conditions. Whether you're working on power supplies, inverters, or motor drives, the MR856FFG provides exceptional value and benefits to meet your needs. Trust Onsemi for cutting-edge technology and superior quality in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the diode lightweight and durable, ideal for applications where weight and durability are important factors.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate the diode into electronic circuits.

Maximum Reverse Recovery Time: 0.3 us

Fast reverse recovery time of 0.3 us ensures efficient operation and helps in reducing switching losses.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices.

Number of Terminals: 2

Having only 2 terminals simplifies the connection and usage of the diode in circuits.

Package Style (Meter): LONG FORM

Long form package style provides additional protection and insulation for the diode, improving reliability and lifespan.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where energy efficiency is a key concern.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can withstand high temperature environments without any performance degradation.

Terminal Finish: TIN

TIN terminal finish provides good electrical conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: AXIAL

Axial terminal position makes it easy to insert and solder the diode into circuit boards.

Case Connection: ISOLATED

Isolated case connection improves safety by preventing electrical contact with the case, reducing the risk of electric shocks.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this diode can withstand high temperature soldering processes without any damage.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC voltage, making it versatile for a wide range of applications.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop of 1.25 V minimizes power loss and improves overall efficiency of the circuit.

Maximum Output Current: 3 A

With a maximum output current of 3 A, this diode can handle moderate power requirements in various electronic circuits.

Terminal Form: WIRE

Wire terminal form allows for easy connection and soldering, making it convenient for circuit assembly.

Maximum Repetitive Peak Reverse Voltage: 600 V

High maximum repetitive peak reverse voltage of 600 V makes this diode suitable for applications requiring high voltage handling capabilities.

Maximum Non Repetitive Peak Forward Current: 100 A

High maximum non-repetitive peak forward current of 100 A allows the diode to handle short duration high current surges.

Diode Element Material: SILICON

Silicon diode element material offers good electrical properties, stable performance, and durability, making it a reliable choice for various applications.

Technical Specifications

Diodes & Rectifiers MR856FFG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR856FFG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20