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MR854RL

Onsemi

MR854RL by Onsemi

MR854RL by Onsemi is a single rectifier diode with a max forward voltage of 1.3V and output current of 3A. With a max reverse recovery time of 0.3us, it operates at temperatures up to 175 °C. Ideal for applications requiring high efficiency, this diode has a peak repetitive reverse voltage of 400V.

Median Price

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Lifecycle Status

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11

In-Stock Inventory

1k+

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Chip Stock

USA . 5,900 parts In-Stock

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Digiode

USA . 1,880 parts In-Stock

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A&K Electronics

USA . 1,500 parts In-Stock

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Bristol Electronics

USA . 1,500 parts In-Stock

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R&J Components

USA . 1,200 parts In-Stock

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ECAB

Sweden . 1,200 parts In-Stock

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Electronics Depot

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ComSIT Distribution GmbH

Germany . 943 parts In-Stock

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Vyrian

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Fibra_Brandt Electronic GMBH

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LIBRA Elektronik GmbH

Germany . 119 parts In-Stock

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GreenTree Electronics

Israel . 170,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 7,129 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Corphita

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UHIMA Technologies

Türkiye . 459 parts In-Stock

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Kulean Microsystems

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Overview

Experience unparalleled efficiency and reliability with the Onsemi MR854RL diode rectifier. Manufactured by a trusted industry leader, this product is designed to meet the highest quality standards for a wide range of applications. With a maximum output current of 3A and a peak repetitive peak reverse voltage of 400V, this diode offers unmatched performance and value to customers seeking optimal functionality. Trust Onsemi to provide you with the best solution for your efficiency needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Simplifies circuit design and layout, making it easier to integrate into various applications.

Maximum Reverse Recovery Time: 0.3 us

Fast recovery time allows for efficient and effective operation, reducing switching losses.

Package Shape: ROUND

Compact shape saves space and allows for easy mounting.

No. of Terminals: 2

Simplified connections for ease of use.

Package Style (Meter): LONG FORM

Helps in easy identification and compatibility with existing meter sockets.

Application: EFFICIENCY

Designed for high efficiency applications, making it suitable for energy-saving purposes.

Maximum Operating Temperature: 175 °C

Can withstand high operating temperatures, suitable for harsh environments.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance.

Terminal Position: AXIAL

Simplifies placement and connection of the diode in a circuit.

Case Connection: ISOLATED

Prevents electrical interference and ensures proper functioning of the diode.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering or reflow processes.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop minimizes power losses and improves efficiency.

Maximum Output Current: 3 A

Capable of handling moderate to high current loads.

Terminal Form: WIRE

Simplifies connection and ensures secure attachment in a circuit.

Maximum Repetitive Peak Reverse Voltage: 400 V

Suitable for applications that require handling of high reverse voltages.

Maximum Non Repetitive Peak Forward Current: 100 A

Capable of handling short-term high current surges without damage.

Diode Element Material: SILICON

Silicon diodes have good electrical properties and are widely used in various electronic circuits.

Technical Specifications

Diodes & Rectifiers MR854RL attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR854RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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