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MR852

Onsemi

MR852 by Onsemi

The Onsemi MR852 is a single rectifier diode with a max forward voltage of 1.3V and output current of 3A. With a fast reverse recovery time of 0.3us, it operates efficiently at up to 175 °C. Ideal for applications requiring high efficiency and isolation, such as power supplies and inverters.

Median Price

$0.572

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

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Freelance Electronics

USA . 9 parts In-Stock

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$0.167

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Component Electronics Inc.

Canada . 770 parts In-Stock

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American Microsemiconductor Inc.

USA . 34 parts In-Stock

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ComSIT Distribution GmbH

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Electronic Expediters

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ECAB

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Bristol Electronics

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A2Z Electronics, Inc.

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Standard Data Resources

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Resion

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PC Components Company LLC

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Century Electronics Ltd.

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Atlantic Semiconductor

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Martec Srl

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Digiode

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Vyrian

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NexGen Digital

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J2 Sourcing AB

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Lakeland Logistics Inc

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Tech-Mark Corp

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North Shore Components

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Inventory MP

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Corel Iberica Componentes, S.L.

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Semi Source

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LittleDiode

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MISTER SPROCKETS

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PAR Electronics

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Elcom Components

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LWI Electronics Inc

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Mil-Aero Solutions, Inc.

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Prism Electronics

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First Choice Components Inc.

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Corohmni

South Africa . 58 parts In-Stock

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 8,305 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 7,602 parts In-Stock

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A-Z Elektronik GmbH

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Problanco Electronics

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Authorized Procurement Solutions

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Corphita

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Perfect Parts

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UHIMA Technologies

Türkiye . 376 parts In-Stock

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Assy Fe

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Overview

Unlock efficiency and reliability with the MR852 diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch quality products that meet the highest standards. The MR852 is a game-changer in the field of diodes & rectifiers, offering a fast maximum reverse recovery time of 0.3 us and a high maximum output current of 3 A. With its matte tin terminal finish and isolated case connection, this rectifier diode ensures optimal performance even in high-temperature environments up to 175 °C. Ideal for applications requiring efficiency, the MR852 is the perfect solution for customers looking for a dependable and cost-effective component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various industrial applications.

Config: SINGLE

Single configuration simplifies installation and circuit design, making it user-friendly.

Maximum Reverse Recovery Time: 0.3 us

Fast reverse recovery time ensures efficient operation and reduces power losses.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various devices and circuits.

No. of Terminals: 2

Having only 2 terminals simplifies connection and reduces chances of error during installation.

Package Style (Meter): LONG FORM

Long form package provides flexibility in placement and orientation within a circuit or device.

Application: EFFICIENCY

Designed for efficiency, making it suitable for applications where power consumption needs to be optimized.

Maximum Operating Temperature: 175 °C

Ability to operate at high temperatures allows for use in demanding environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good electrical conductivity and corrosion resistance, ensuring reliable performance.

Terminal Position: AXIAL

Axial terminal position simplifies mounting and connection in circuits.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and enhances safety in operation.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC current, suitable for various power supply applications.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop minimizes power loss and improves efficiency in rectification processes.

Maximum Output Current: 3 A

High output current handling capacity makes it suitable for applications requiring moderate power levels.

Terminal Form: WIRE

Wire terminal form allows for easy connection and secure attachment in circuits.

Maximum Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating provides protection against voltage spikes and ensures reliable operation.

Maximum Non Repetitive Peak Forward Current: 100 A

High peak forward current handling capability makes it suitable for handling short-duration high current impulses.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and efficiency in rectification processes.

Technical Specifications

Diodes & Rectifiers MR852 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR852 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-026-6125, 5961010266125, 5961-14-374-8200, 5961143748200, 5961-14-398-3279, 5961143983279

NIIN

010266125, 143748200, 143983279

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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