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MR850

Onsemi

MR850 by Onsemi

The Onsemi MR850 is a single rectifier diode with a max forward voltage of 1.3V and output current of 3A. With a fast reverse recovery time of 0.3us, it is ideal for high-efficiency applications operating at temperatures up to 175 °C. The diode's isolated case connection and matte tin terminal finish make it suitable for various electronic designs.

Median Price

$0.072

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 2,524 parts In-Stock

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$0.075

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$0.033

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$0.031

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$0.075

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Chip1Stop

Japan . 2,624 parts In-Stock

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Verical

USA . 2,524 parts In-Stock

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$0.031

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Vyrian

USA . 1,272 parts In-Stock

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DF Sales Co.

USA . 3,473 parts In-Stock

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$0.240

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DF Sales Co.

USA . 3,473 parts In-Stock

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$0.240

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$0.240

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$0.240

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R&J Components

USA . 5,556 parts In-Stock

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Bristol Electronics

USA . 4,000 parts In-Stock

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Dan-Mar Components

USA . 4,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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PC Components Company LLC

USA . 2,628 parts In-Stock

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Electronic Expediters

USA . 1,734 parts In-Stock

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Electronics Depot

USA . 846 parts In-Stock

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Tech-Mark Corp

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EMSNET

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Digiode

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MISTER SPROCKETS

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Carlin Systems, Inc.

USA . 200 parts In-Stock

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Prism Electronics

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Standard Data Resources

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ECAB

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Sinequanon

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Resion

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Fibra_Brandt Electronic GMBH

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Corohmni

South Africa . 366 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,633 parts In-Stock

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Kulean Microsystems

USA . 7,730 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 3,599 parts In-Stock

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Corphita

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Problanco Electronics

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UHIMA Technologies

Türkiye . 634 parts In-Stock

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Perfect Parts

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Overview

Upgrade your efficiency with the MR850 by Onsemi. This high-quality rectifier diode offers reliable performance and durability, thanks to its manufacturer's reputation for excellence. Ideal for a range of applications, this diode provides fast recovery times and low forward voltage, ensuring optimal energy savings. Say goodbye to inefficiency and hello to improved performance with the MR850.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection to the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.3 us

The low maximum reverse recovery time ensures fast switching, which is important for efficiency and performance in applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand intense heat conditions, making it reliable in demanding environments.

Maximum Output Current: 3 A

The high maximum output current capability allows this diode to handle heavy loads effectively, making it versatile for different power applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC) with high efficiency, making it ideal for power supply applications.

Technical Specifications

Diodes & Rectifiers MR850 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR850 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-483-4190, 5961004834190, 5961-01-169-4686, 5961011694686, 5961-01-122-6715, 5961011226715

NIIN

004834190, 011694686, 011226715

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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