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MR850RL

Onsemi

MR850RL by Onsemi

The Onsemi MR850RL is a single rectifier diode with a max forward voltage of 1.25V and output current of 3A. With a fast reverse recovery time of 0.3us, it is ideal for applications requiring high-speed switching in electronic circuits. The diode's package style is long form, making it suitable for use in various devices where efficient power management is crucial.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Standard Data Resources

USA . 4,175 parts In-Stock

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4,175

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Vyrian

USA . 1,667 parts In-Stock

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1,667

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R&J Components

USA . 1,500 parts In-Stock

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1,500

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Digiode

USA . 1,204 parts In-Stock

1+ parts

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1,204

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 4,060 parts In-Stock

1+ parts

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4,060

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Kulean Microsystems

USA . 1,877 parts In-Stock

1+ parts

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1,877

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UHIMA Technologies

Türkiye . 864 parts In-Stock

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864

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Problanco Electronics

Mexico . 654 parts In-Stock

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654

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TANS Electronics

Latvia . 280 parts In-Stock

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280

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Corphita

USA . 261 parts In-Stock

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261

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Corohmni

South Africa . 222 parts In-Stock

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222

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Overview

Experience superior quality and performance with the MR850RL diode rectifier by Onsemi. As a leading manufacturer in the industry, Onsemi ensures reliability and efficiency in all their products. The MR850RL is ideal for a wide range of applications, offering customers value and benefits such as fast reverse recovery time and high output current capacity. Upgrade your electronic devices with the MR850RL and enjoy seamless operation and enhanced functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the diode long-lasting and reliable.

Maximum Reverse Recovery Time: 0.3 us

With a fast reverse recovery time, this diode is efficient and responsive in switching applications.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows for reliable performance in various industrial environments.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage ensures minimal power loss and efficient energy conversion.

Maximum Output Current: 3 A

With a high output current capacity, this diode can handle a range of electrical loads.

Maximum Repetitive Peak Reverse Voltage: 50 V

Suitable for applications requiring voltage rectification up to 50 volts.

Maximum Non Repetitive Peak Forward Current: 100 A

Capable of handling high surge currents, making it suitable for transient overvoltage protection.

Diode Element Material: SILICON

Silicon diodes are known for their reliability, stability, and low leakage currents, ensuring high performance.

Technical Specifications

Diodes & Rectifiers MR850RL attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MR850RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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