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MR854

Onsemi

MR854 by Onsemi

The Onsemi MR854 is a single rectifier diode with a max forward voltage of 1.3V and output current of 3A. With a fast reverse recovery time of 0.3us, it operates at temperatures up to 175 °C. Ideal for efficiency applications, this diode has a max repetitive peak reverse voltage of 400V and non-repetitive peak forward current of 100A.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

36

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 148 parts In-Stock

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$0.040

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$0.040

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$0.040

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148

$0.040

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$0.040

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Distributors (In-Stock)

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DF Sales Co.

USA . 770 parts In-Stock

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$0.084

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770

$0.084

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DF Sales Co.

USA . 770 parts In-Stock

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$0.084

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770

$0.084

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TEDSS.com

USA . 3,350 parts In-Stock

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$0.250

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American Microsemiconductor Inc.

USA . 818 parts In-Stock

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$43.750

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Electronic Expediters

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Vyrian

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Chip Stock

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Corel Iberica Componentes, S.L.

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ComSIT Distribution GmbH

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Fibra_Brandt Electronic GMBH

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Resion

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Electronics Depot

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M&R Communications

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Legend Electronics Inc.

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Martec Srl

Italy . 936 parts In-Stock

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Microfarads

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Digiode

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Odintec Ltd.

Israel . 635 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 600 parts In-Stock

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Tech-Mark Corp

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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Extreme Components

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LittleDiode

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Sogenti Electronics

Canada . 82 parts In-Stock

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LWI Electronics Inc

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ECAB

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PC Components Company LLC

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Prism Electronics

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First Choice Components Inc.

USA . 3 parts In-Stock

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Donberg Electronics Ltd

Ireland . 1 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 188 parts In-Stock

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Component Stockers USA

USA . 560 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 25,336 parts In-Stock

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Metaverse IC Inc.

Canada . 25,000 parts In-Stock

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Kulean Microsystems

USA . 6,577 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,754 parts In-Stock

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Problanco Electronics

Mexico . 4,616 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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TANS Electronics

Latvia . 2,714 parts In-Stock

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SupplyDigital Components

Austria . 2,710 parts In-Stock

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Corphita

USA . 2,268 parts In-Stock

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Assy Fe

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Eliminating Global Boundries, Inc

USA . 1,200 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 700 parts In-Stock

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GreenTree Electronics

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Overview

Elevate your efficiency with the MR854 diode by Onsemi. Known for their high-quality products, Onsemi delivers reliable components that exceed industry standards. The MR854's fast reverse recovery time and low forward voltage make it ideal for a wide range of applications, offering customers unmatched value and performance. Upgrade your systems with the MR854 and experience the benefits of superior quality and enhanced efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent insulation and protection for the diode, ensuring durability and longevity.

Maximum Reverse Recovery Time: 0.3 us

Ensures fast switching speed, making it suitable for high-frequency applications.

Application: EFFICIENCY

Designed for efficient energy conversion, making it ideal for power supply and voltage regulation.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, allowing for reliable performance in challenging environments.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop minimizes power loss and improves overall efficiency of the circuit.

Maximum Output Current: 3 A

Capable of handling high current loads, suitable for a wide range of applications.

Maximum Repetitive Peak Reverse Voltage: 400 V

Can withstand high reverse voltages, making it suitable for rectification and power conversion.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and reliability, making them a popular choice for electronic applications.

Technical Specifications

Diodes & Rectifiers MR854 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR854 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-122-7609, 5961011227609, 5961-01-168-3348, 5961011683348, 5961-01-109-3690, 5961011093690, 5961-14-358-7392, 5961143587392

NIIN

011227609, 011683348, 011093690, 143587392

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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