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MR856-G

Sangdest Microelectronics (Nanjing)

MR856-G by Sangdest Microelectronics (Nanjing)

MR856-G by Sangdest Microelectronics is a single rectifier diode with a max output current of 3A and a max repetitive peak reverse voltage of 600V. Its fast 0.15us reverse recovery time makes it ideal for efficiency applications, featuring an isolated case connection and wire terminal form in a round plastic/epoxy package.

Median Price

$0.140

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Chip1Stop

Japan . 29 parts In-Stock

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$0.844

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29

$0.844

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Rochester

USA . 80,478 parts In-Stock

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$0.108

1k+ parts

$0.090

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$0.080

80,478

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$0.108

$0.090

$0.080

DigiKey

USA . 80,478 parts In-Stock

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$0.140

80,478

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$0.140

Distributors (In-Stock)

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Digiode

USA . 2,293 parts In-Stock

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$0.085

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2,293

$0.085

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Nova Conductors

Japan . 141 parts In-Stock

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$0.085

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141

$0.085

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Component Electronics Inc.

Canada . 800 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

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$0.500

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-

800

$0.770

$0.580

$0.500

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DigiKey Marketplace

USA . 99,548 parts In-Stock

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Vyrian

USA . 79,889 parts In-Stock

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Prism Electronics

USA . 1,051 parts In-Stock

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EMSNET

USA . 889 parts In-Stock

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889

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Sunrise Surplus Inc.

USA . 500 parts In-Stock

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500

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Distributors (Availability)

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Semicontronic

India . 82,474 parts In-Stock

1+ parts

$0.076

100+ parts

$0.074

1k+ parts

$0.074

10k+ parts

-

82,474

$0.076

$0.074

$0.074

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Corphita

USA . 711 parts In-Stock

1+ parts

$0.080

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711

$0.080

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Corohmni

South Africa . 298 parts In-Stock

1+ parts

$0.083

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298

$0.083

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Continental Prestige Electronics

USA . 109,613 parts In-Stock

1+ parts

$0.085

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$0.083

109,613

$0.085

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$0.083

Argo Parts USA

USA . 1,857 parts In-Stock

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$0.085

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$0.083

1,857

$0.085

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$0.083

Netroflash

USA . 1,100 parts In-Stock

1+ parts

$0.085

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$0.083

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1,100

$0.085

$0.083

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Aztec Data Supply Inc.

USA . 2,614 parts In-Stock

1+ parts

$0.112

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2,614

$0.112

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Ampacity Inc.

Singapore . 84,328 parts In-Stock

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$0.165

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$0.165

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Perfect Parts

USA . 211,991 parts In-Stock

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TANS Electronics

Latvia . 7,039 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,801 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 3,515 parts In-Stock

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Authorized Procurement Solutions

USA . 2,689 parts In-Stock

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SupplyDigital Components

Austria . 1,524 parts In-Stock

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GreenTree Electronics

Israel . 1,044 parts In-Stock

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Assy Fe

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UHIMA Technologies

Türkiye . 293 parts In-Stock

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Kulean Microsystems

USA . 139 parts In-Stock

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Overview

Enhance the efficiency of your electronic devices with the MR856-G by Sangdest Microelectronics (Nanjing). As a leading manufacturer in diodes & rectifiers, Sangdest Microelectronics (Nanjing) ensures top-notch quality and reliability in their products. The MR856-G is designed to provide a fast reverse recovery time, making it ideal for applications where efficiency is key. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 600V, this rectifier diode offers unparalleled value and performance. Upgrade your electronic projects with the MR856-G and experience the benefits of superior quality and precision engineering.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and insulation for the diode, making it durable and long-lasting.

Config: SINGLE

The single configuration simplifies the setup and installation process, making it easy to use for various applications.

Maximum Reverse Recovery Time: 0.15 us

With a fast reverse recovery time, this diode ensures efficient and quick switching performance.

Package Shape: ROUND

The round shape allows for easy mounting and placement in different electronic devices and systems.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): LONG FORM

The long form package style offers a larger surface area for heat dissipation, ensuring optimal performance under high loads.

Application: EFFICIENCY

Designed for efficiency, this diode is perfect for applications where power conservation is crucial.

Terminal Position: AXIAL

The axial terminal position makes it easier to connect and integrate this diode within a circuit or system.

Case Connection: ISOLATED

With an isolated case connection, this diode provides enhanced safety and protection against electrical hazards.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting AC to DC power efficiently and reliably.

Maximum Output Current: 3 A

With a maximum output current of 3 A, this diode is suitable for medium power applications.

Terminal Form: WIRE

The wire terminal form offers flexibility in wiring and connection options, making it versatile for different setups.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high peak reverse voltage rating, this diode can handle voltages up to 600V safely and reliably.

Maximum Non Repetitive Peak Forward Current: 150 A

The high non-repetitive peak forward current allows this diode to withstand short-duration high current spikes without damage.

Diode Element Material: SILICON

Utilizing silicon as the diode element material ensures stable and consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers MR856-G attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.15 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

MR856-G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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