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MR852G

Onsemi

MR852G by Onsemi

The Onsemi MR852G is a single rectifier diode with a max output current of 3A and forward voltage of 1.3V. It has a fast reverse recovery time of 0.3us, making it ideal for efficiency applications in temperatures ranging from -65 to 125°C. The diode's isolated case connection and matte tin terminal finish ensure reliable performance in various electronic circuits.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 37,441 parts In-Stock

1+ parts

$0.110

100+ parts

$0.110

1k+ parts

$0.110

10k+ parts

-

37,441

$0.110

$0.110

$0.110

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Chip1Stop

Japan . 5 parts In-Stock

1+ parts

$0.842

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-

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5

$0.842

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Avnet

USA . 13,730 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.084

10k+ parts

$0.078

13,730

-

-

$0.084

$0.078

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 766 parts In-Stock

1+ parts

$0.045

100+ parts

-

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766

$0.045

-

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Nova Conductors

Japan . 1,010 parts In-Stock

1+ parts

$0.101

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1,010

$0.101

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J2 Sourcing AB

Sweden . 6,336 parts In-Stock

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6,336

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North Shore Components

USA . 848 parts In-Stock

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848

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PC Components Company LLC

USA . 24 parts In-Stock

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24

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Prism Electronics

USA . 13 parts In-Stock

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13

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Bristol Electronics

USA . 6 parts In-Stock

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6

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Vyrian

USA . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,411 parts In-Stock

1+ parts

$0.042

100+ parts

-

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1,411

$0.042

-

-

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Corohmni

South Africa . 260 parts In-Stock

1+ parts

$0.047

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260

$0.047

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Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

$0.101

100+ parts

$0.096

1k+ parts

$0.091

10k+ parts

$0.090

10

$0.101

$0.096

$0.091

$0.090

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.101

100+ parts

-

1k+ parts

$0.096

10k+ parts

$0.094

50

$0.101

-

$0.096

$0.094

Ampacity Inc.

Singapore . 5 parts In-Stock

1+ parts

$0.720

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5

$0.720

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Component Stockers USA

USA . 356 parts In-Stock

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$99.990

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356

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 29,760 parts In-Stock

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29,760

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Perfect Parts

USA . 13,077 parts In-Stock

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13,077

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TANS Electronics

Latvia . 5,526 parts In-Stock

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5,526

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Kulean Microsystems

USA . 5,327 parts In-Stock

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5,327

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Kepictronics

USA . 4,500 parts In-Stock

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4,500

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Problanco Electronics

Mexico . 3,382 parts In-Stock

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SupplyDigital Components

Austria . 1,431 parts In-Stock

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1,431

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UHIMA Technologies

Türkiye . 631 parts In-Stock

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631

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GreenTree Electronics

Israel . 73 parts In-Stock

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73

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Overview

Unleash the power of efficiency with the Onsemi MR852G diode rectifier. Crafted with precision and quality by Onsemi, this diode offers unmatched performance and reliability. Perfect for a wide range of applications, this diode excels in providing seamless functionality while maintaining a low operating temperature. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 200V, the MR852G is your go-to solution for all your efficiency needs. Upgrade your systems with this high-performing diode and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.3 us

The quick reverse recovery time ensures efficient operation and fast response of the diode, making it ideal for high-speed applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising its performance.

Maximum Output Current: 3 A

The high maximum output current capability allows this diode to handle heavy loads and provide reliable power distribution.

Maximum Repetitive Peak Reverse Voltage: 200 V

With a high peak reverse voltage rating, this diode can safely handle reverse voltages up to 200 V, making it suitable for various circuit designs.

Technical Specifications

Diodes & Rectifiers MR852G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR852G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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