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MR856

Onsemi

MR856 by Onsemi

The Onsemi MR856 is a single rectifier diode with a max forward voltage of 1.3V and output current of 3A. With a fast reverse recovery time of 0.3us, it operates at temperatures up to 175 °C. Ideal for efficiency applications, this diode has a max repetitive peak reverse voltage of 600V and non-repetitive peak forward current of 100A.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 3,233 parts In-Stock

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$0.040

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$0.040

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TEDSS.com

USA . 144,850 parts In-Stock

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Forefront Electronics and Design

USA . 35 parts In-Stock

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Component Electronics Inc.

Canada . 10 parts In-Stock

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$0.770

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10

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American Microsemiconductor Inc.

USA . 364 parts In-Stock

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R&J Components

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Electronic Expediters

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Vyrian

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Manotoh

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MISTER SPROCKETS

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Elcom Components

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Century Electronics Ltd.

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Digiode

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ACDS - Activité Composants Distribution Service

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Infinite Electronics LLP

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Semi Source

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Tectiva GmbH

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Odyssey Electronics LTD

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LIBRA Elektronik GmbH

Germany . 40 parts In-Stock

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Extreme Components

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Fibra_Brandt Electronic GMBH

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Huijzer Components

Netherlands . 23 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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First Choice Components Inc.

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Sunrise Surplus Inc.

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LittleDiode

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Tech-Mark Corp

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Donberg Electronics Ltd

Ireland . 1 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.108

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$0.098

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Corohmni

South Africa . 222 parts In-Stock

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Component Stockers USA

USA . 639 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 25,000 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 6,635 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,254 parts In-Stock

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Problanco Electronics

Mexico . 5,907 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

USA . 1,781 parts In-Stock

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Corphita

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Cyclops Electronics Ltd (Excess)

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UHIMA Technologies

Türkiye . 935 parts In-Stock

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Glotronic Ltd.

UK . 711 parts In-Stock

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Assy Fe

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Overview

Upgrade your efficiency with the MR856 by Onsemi. This top-quality rectifier diode offers superior performance and reliability, thanks to Onsemi's renowned manufacturing standards. Perfect for a wide range of applications, this diode ensures smooth operation and maximum output current of 3A. Say goodbye to downtime and hello to increased productivity with the MR856.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various operating conditions.

Maximum Reverse Recovery Time: 0.3 us

The fast reverse recovery time of 0.3 us allows for efficient switching and operation of the diode.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this diode can withstand elevated temperatures without compromising performance.

Maximum Forward Voltage (VF): 1.3 V

The low forward voltage ensures minimal power loss and efficient operation of the diode.

Maximum Output Current: 3 A

The high maximum output current of 3 A allows for the handling of high current loads, making it suitable for a wide range of applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage rating of 600 V ensures reliable performance and protection against voltage spikes.

Technical Specifications

Diodes & Rectifiers MR856 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR856 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-189-1916, 5961001891916, 5961-00-397-7894, 5961003977894, 5961-01-362-2647, 5961013622647, 5961-01-165-5164, 5961011655164, 5961-01-181-7430, 5961011817430, 5961-01-220-8210, 5961012208210, 5961-01-274-1516, 5961012741516

NIIN

001891916, 003977894, 013622647, 011655164, 011817430, 012208210, 012741516

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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