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MPTE-5RL4G

Onsemi

MPTE-5RL4G by Onsemi

The Onsemi MPTE-5RL4G is a Zener diode with 1500W peak power dissipation, 5V max repetitive reverse voltage, and 9.4V clamping voltage. Ideal for transient suppression in electronic circuits to protect against voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 42,000 parts In-Stock

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42,000

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Vyrian

USA . 10,197 parts In-Stock

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Digiode

USA . 651 parts In-Stock

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651

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AZTECH Wire

Italy . 1,177 parts In-Stock

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$14.930

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Component Stockers USA

USA . 550 parts In-Stock

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$99.990

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550

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TANS Electronics

Latvia . 5,604 parts In-Stock

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5,604

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Corphita

USA . 2,497 parts In-Stock

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2,497

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SupplyDigital Components

Austria . 1,806 parts In-Stock

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Kulean Microsystems

USA . 816 parts In-Stock

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UHIMA Technologies

Türkiye . 320 parts In-Stock

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320

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Problanco Electronics

Mexico . 310 parts In-Stock

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Corohmni

South Africa . 254 parts In-Stock

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Overview

Experience the superior quality and reliability of the MPTE-5RL4G by Onsemi, a leading manufacturer in the industry. This Transient Suppression Device offers unparalleled protection against voltage spikes and surges, ensuring the safety of your electronic devices. With a maximum clamping voltage of 9.4V and a peak power dissipation of 1500W, this product provides peace of mind for your applications. Trust in Onsemi's expertise and invest in the protection your equipment deserves.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, ensuring a long lifespan.

Config: SINGLE

Single configuration simplifies installation and maintenance of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability protects connected equipment from voltage spikes and surges.

Package Shape: ROUND

Round shape allows for easy installation and integration into various systems.

No. of Terminals: 2

Simple 2-terminal setup makes it easy to connect and use the device.

Package Style (Meter): LONG FORM

Long form factor makes the device easy to handle and install in different applications.

Terminal Finish: TIN

Tin finish provides good conductivity and corrosion resistance for reliable performance.

Terminal Position: AXIAL

Axial terminal position simplifies mounting and connections for efficient use.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents electrical interference in the system.

Maximum Power Dissipation: 5 W

Efficient power dissipation capability prevents overheating and ensures long-term reliability.

Minimum Breakdown Voltage: 6 V

High minimum breakdown voltage offers enhanced protection against voltage surges and spikes.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering and integration into PCB assemblies.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans Voltage Suppressor diode offers fast response to voltage transients, protecting sensitive circuits.

Technology: ZENER

Zener technology provides precise voltage regulation and protection against overvoltage conditions.

Terminal Form: WIRE

Wire terminal form ensures easy connection and secure attachment in diverse applications.

Maximum Repetitive Peak Reverse Voltage: 5 V

Low maximum repetitive peak reverse voltage protects devices with low voltage tolerance.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that voltage spikes are only diverted in one direction, enhancing protection.

Maximum Clamping Voltage: 9.4 V

High maximum clamping voltage provides effective suppression of voltage spikes and transients.

Diode Element Material: SILICON

Silicon diode element material offers reliable performance and durability for long-term use.

Technical Specifications

Transient Suppression Devices MPTE-5RL4G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

6 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

9.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MPTE-5RL4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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