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MPTE-12G

Onsemi

MPTE-12G by Onsemi

The Onsemi MPTE-12G is a Zener technology Trans Voltage Suppressor Diode with 12V max repetitive peak reverse voltage and 1500W non-repetitive peak power dissipation. It has unidirectional polarity, 21.2V clamping voltage, and is used in transient suppression applications due to its high power dissipation capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,511 parts In-Stock

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Digiode

USA . 161 parts In-Stock

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Kulean Microsystems

USA . 6,852 parts In-Stock

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6,852

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TANS Electronics

Latvia . 4,789 parts In-Stock

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SupplyDigital Components

Austria . 4,193 parts In-Stock

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Corphita

USA . 1,314 parts In-Stock

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Problanco Electronics

Mexico . 704 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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UHIMA Technologies

Türkiye . 89 parts In-Stock

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Overview

Enhance the reliability of your electronic devices with the Onsemi MPTE-12G Transient Suppression Device. Manufactured by Onsemi, a trusted name in the industry known for their high-quality products, this single-configured diode offers unparalleled protection against voltage spikes and surges. Ideal for a wide range of applications, this Zener diode ensures that your equipment stays safe and operational. Invest in the MPTE-12G today and experience the peace of mind that comes with superior surge protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making this product a reliable choice for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capability, this product can effectively handle transient voltage spikes and protect connected equipment from damage.

Package Shape: ROUND

The round package shape allows for easy installation and integration into various systems, making it versatile for different applications.

Minimum Operating Temperature: -65 °C

The wide operating temperature range of -65 to 175 °C ensures that this product can perform effectively in extreme environments, providing reliable protection in any conditions.

Maximum Repetitive Peak Reverse Voltage: 12 V

The high repetitive peak reverse voltage rating of 12 V ensures that this product can handle multiple transient events without degradation, enhancing its reliability.

Technical Specifications

Transient Suppression Devices MPTE-12G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

14.1 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

21.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MPTE-12G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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