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MPTE-10RL4

Onsemi

MPTE-10RL4 by Onsemi

MPTE-10RL4 by Onsemi is a Zener diode with 10V max repetitive peak reverse voltage and 1500W max non-repetitive peak reverse power dissipation. It has a unidirectional polarity, ideal for transient suppression in electronic circuits. With a package style of long form and terminal finish of tin lead, it operates b/w -65 °C to 175°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,458 parts In-Stock

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Digiode

USA . 1,734 parts In-Stock

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Kulean Microsystems

USA . 7,993 parts In-Stock

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Problanco Electronics

Mexico . 3,035 parts In-Stock

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SupplyDigital Components

Austria . 2,577 parts In-Stock

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Corphita

USA . 2,464 parts In-Stock

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TANS Electronics

Latvia . 1,554 parts In-Stock

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UHIMA Technologies

Türkiye . 835 parts In-Stock

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Corohmni

South Africa . 338 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the MPTE-10RL4 transient suppression device by Onsemi. Manufactured with top-quality materials and cutting-edge technology, this product offers unparalleled reliability and performance. Ideal for a wide range of applications, this single-configured device provides a maximum clamping voltage of 14.1V, ensuring your equipment stays safe from harmful power surges. Trust Onsemi to deliver superior products that guarantee peace of mind for you and your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the device, making it suitable for various environments and applications.

Config: SINGLE

Single configuration simplifies installation and maintenance compared to multiple configurations, reducing complexity and cost.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability ensures the device can handle surge currents and protect connected equipment effectively.

Nominal Breakdown Voltage: 12 V

The specific breakdown voltage of 12V ensures that the device activates at the right voltage level to suppress transient spikes effectively.

Package Shape: ROUND

Round package shape facilitates easy installation and mounting in various applications, offering flexibility in design and placement.

No. of Terminals: 2

Having only two terminals simplifies the connection process and reduces the likelihood of errors during installation.

Package Style (Meter): LONG FORM

Long form package style provides additional protection and insulation for the device, improving reliability and safety.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures the device can withstand harsh environmental conditions without performance degradation.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows the device to function in extreme cold conditions, making it suitable for a wide range of environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability, enhancing the device's reliability and longevity.

Terminal Position: AXIAL

Axial terminal position simplifies the connection process and improves the overall efficiency of the device in protecting against transient surges.

Case Connection: ISOLATED

Isolated case connection enhances safety by preventing electrical leakage and ensuring proper insulation between components.

Maximum Power Dissipation: 5 W

A maximum power dissipation of 5W ensures energy is dissipated effectively during transient events, preventing damage to connected equipment.

Minimum Breakdown Voltage: 11.7 V

The minimum breakdown voltage of 11.7V ensures reliable and consistent performance in suppressing transient spikes within the specified range.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type is specifically designed for surge protection, offering superior performance in handling transient events.

Technology: ZENER

Zener technology provides precise voltage regulation and transient suppression capability, ensuring effective protection for connected devices.

Terminal Form: WIRE

Wire terminal form offers easy connection and secure attachment, enhancing the overall usability and reliability of the device.

Maximum Repetitive Peak Reverse Voltage: 10 V

Having a maximum repetitive peak reverse voltage of 10V ensures the device can handle multiple transient events without performance degradation.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device suppresses transient spikes in one direction only, providing targeted protection for sensitive equipment.

Maximum Clamping Voltage: 14.1 V

The maximum clamping voltage of 14.1V limits the voltage spike across the protected circuit, preventing damage and ensuring reliable operation.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in suppressing transient spikes, providing long-term protection for connected devices.

Technical Specifications

Transient Suppression Devices MPTE-10RL4 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

11.7 V

Nominal Breakdown Voltage:

12 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

14.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPTE-10RL4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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