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MPTE-12C

Onsemi

MPTE-12C by Onsemi

The Onsemi MPTE-12C is a Zener diode with 12V max repetitive peak reverse voltage and 1500W non-repetitive peak power dissipation. It is used for transient suppression in applications requiring bidirectional polarity protection, with a max clamping voltage of 17.1V.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 30 parts In-Stock

1+ parts

$0.380

100+ parts

$0.290

1k+ parts

$0.250

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30

$0.380

$0.290

$0.250

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Vyrian

USA . 2,067 parts In-Stock

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2,067

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Digiode

USA . 696 parts In-Stock

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696

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Electronic Expediters

USA . 64 parts In-Stock

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64

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 454 parts In-Stock

1+ parts

$0.380

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454

$0.380

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Kulean Microsystems

USA . 7,006 parts In-Stock

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7,006

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SupplyDigital Components

Austria . 2,570 parts In-Stock

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TANS Electronics

Latvia . 2,367 parts In-Stock

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Corphita

USA . 1,345 parts In-Stock

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1,345

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Problanco Electronics

Mexico . 1,225 parts In-Stock

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1,225

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UHIMA Technologies

Türkiye . 797 parts In-Stock

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797

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Overview

Enhance the protection of your electronic devices with the MPTE-12C from Onsemi. As a leading manufacturer in transient suppression devices, Onsemi ensures top-notch quality and reliability in every product. The MPTE-12C is perfect for a wide range of applications, offering exceptional value and benefits to customers seeking reliable overvoltage protection. Trust in the advantages of Onsemi's expertise and the superior performance of the MPTE-12C for all your electronic protection needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the device, making it more durable and reliable.

Configuration: SINGLE

Single configuration allows for simple and easy installation and connection in circuits.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capacity, this device can effectively handle transient surges and protect the circuit from damage.

Package Shape: ROUND

Round shape allows for better heat dissipation and can fit in tight spaces more efficiently.

Number of Terminals: 2

Having only two terminals simplifies the connection process and reduces the chances of errors during installation.

Package Style: LONG FORM

Long form package style provides better mechanical strength and stability for the device.

Terminal Finish: TIN LEAD

Tin lead finish ensures good electrical conductivity and solderability for easy integration into circuits.

Terminal Position: AXIAL

Axial terminal position enables the device to be easily mounted and connected in a linear arrangement.

Case Connection: ISOLATED

Isolated case connection helps in preventing any unwanted electrical interference and enhances the device's overall performance.

Maximum Power Dissipation: 5 W

Despite its small size, the device can handle a considerable amount of power, adding to its efficiency and reliability.

Minimum Breakdown Voltage: 14.1 V

Higher breakdown voltage ensures better protection against voltage surges and spikes, making it more reliable in safeguarding the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type indicates that the device is specifically designed for transient suppression applications, ensuring effective protection against voltage transients.

Technology: ZENER

Zener technology offers precise voltage regulation and clamping performance, making the device more efficient in protecting sensitive components from voltage spikes.

Terminal Form: WIRE

Wire terminal form provides secure and reliable connections, ensuring stable performance of the device.

Maximum Repetitive Peak Reverse Voltage: 12 V

Capable of handling repetitive peak reverse voltages up to 12 V, this device offers consistent protection against voltage surges over time.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the device to protect against voltage spikes in both directions, offering comprehensive protection to the circuit.

Maximum Clamping Voltage: 17.1 V

With a maximum clamping voltage of 17.1 V, the device can effectively limit the voltage spike amplitude, ensuring the safety of connected components.

Diode Element Material: SILICON

Using silicon as the diode element material provides good thermal stability and efficiency, enhancing the overall performance and reliability of the device.

Technical Specifications

Transient Suppression Devices MPTE-12C attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

14.1 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

17.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPTE-12C Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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