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MPTE-15RL4

Onsemi

MPTE-15RL4 by Onsemi

MPTE-15RL4 by Onsemi is a Zener diode with 1500W peak power dissipation, 18V breakdown voltage, and 15V reverse voltage. It is used for transient suppression in applications requiring unidirectional polarity protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,486 parts In-Stock

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Digiode

USA . 280 parts In-Stock

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280

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TANS Electronics

Latvia . 6,474 parts In-Stock

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Kulean Microsystems

USA . 4,748 parts In-Stock

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SupplyDigital Components

Austria . 1,922 parts In-Stock

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Corphita

USA . 1,826 parts In-Stock

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UHIMA Technologies

Türkiye . 885 parts In-Stock

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Problanco Electronics

Mexico . 636 parts In-Stock

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Corohmni

South Africa . 58 parts In-Stock

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Overview

Enhance your electronic devices' protection with the MPTE-15RL4 by Onsemi. Crafted with precision and expertise, this Transient Suppression Device guarantees top-notch quality and reliability. Ideal for a wide range of applications, this product offers unparalleled value by safeguarding against power surges and voltage spikes. Say goodbye to potential damage and downtime, and say hello to peace of mind with the MPTE-15RL4. Choose Onsemi for superior performance and lasting protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the device, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high maximum power dissipation capacity, this product can effectively handle sudden spikes in voltage, protecting connected equipment.

Nominal Breakdown Voltage: 18 V

Having a nominal breakdown voltage of 18V means this device can efficiently suppress transient voltage spikes above this level, safeguarding sensitive electronics.

Package Shape: ROUND

The round package shape allows for easy installation and connection in various systems and circuits.

Maximum Power Dissipation: 5 W

Despite being compact, this device is capable of dissipating up to 5W of power, ensuring effective transient suppression without overheating.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a specialized trans voltage suppressor diode ensures efficient and reliable transient voltage suppression in the circuit.

Technology: ZENER

Zener technology provides accurate and stable breakdown voltage characteristics, making this device a dependable choice for transient suppression.

Maximum Clamping Voltage: 20.6 V

The maximum clamping voltage of 20.6V indicates that this device can effectively limit transient voltage spikes to a safe level, protecting connected equipment.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high performance, reliability, and efficiency in transient suppression applications.

Technical Specifications

Transient Suppression Devices MPTE-15RL4 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

17.6 V

Nominal Breakdown Voltage:

18 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

20.6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPTE-15RL4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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