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MPTE-18

Onsemi

MPTE-18 by Onsemi

The Onsemi MPTE-18 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 18V max repetitive peak reverse voltage and 1500W max non-repetitive peak reverse power dissipation. It has a unidirectional polarity, 25.2V max clamping voltage, and is ideal for transient suppression in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,069 parts In-Stock

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Vyrian

USA . 1,068 parts In-Stock

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LWI Electronics Inc

India . 207 parts In-Stock

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Extreme Components

USA . 25 parts In-Stock

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 7,807 parts In-Stock

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7,807

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TANS Electronics

Latvia . 7,487 parts In-Stock

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7,487

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Kulean Microsystems

USA . 7,280 parts In-Stock

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7,280

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Corphita

USA . 1,665 parts In-Stock

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UHIMA Technologies

Türkiye . 759 parts In-Stock

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SupplyDigital Components

Austria . 680 parts In-Stock

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Corohmni

South Africa . 306 parts In-Stock

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Overview

Enhance the performance and reliability of your electronic devices with the MPTE-18 by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi delivers top-quality products that provide superior protection against voltage spikes and surges. The MPTE-18 is designed to safeguard your sensitive components, ensuring smooth operation and longevity. Ideal for a wide range of applications, this single-configured diode offers unparalleled value and peace of mind. Trust Onsemi's expertise and choose the MPTE-18 for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the device, ensuring a long lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

Can handle high power surges, making it suitable for applications with high transient voltage requirements.

Maximum Operating Temperature: 175 °C

Capable of operating at high temperatures, suitable for industrial and harsh environment applications.

Minimum Operating Temperature: -65 °C

Can function in extremely low temperature conditions, suitable for outdoor or cold storage applications.

Technology: AVALANCHE

Avalanche technology ensures fast response to transient voltage spikes, providing reliable protection to connected devices.

Technical Specifications

Transient Suppression Devices MPTE-18 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

21.2 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

25.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

18 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPTE-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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