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MPTE-12RL4G

Onsemi

MPTE-12RL4G by Onsemi

The Onsemi MPTE-12RL4G is a Zener diode with 12V max repetitive peak reverse voltage and 1500W non-repetitive peak power dissipation. It is used for transient suppression in applications requiring unidirectional polarity protection, such as automotive electronics and industrial control systems.

Median Price

$2.644

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

1,500

-

$0.225

$0.186

$0.166

Verical

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

$5.063

1k+ parts

-

10k+ parts

-

1,500

-

$5.063

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,842 parts In-Stock

1+ parts

$0.175

100+ parts

-

1k+ parts

-

10k+ parts

-

1,842

$0.175

-

-

-

Vyrian

USA . 1,447 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

-

1,447

$0.184

-

-

-

Chip Stock

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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80,000

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,009 parts In-Stock

1+ parts

$0.156

100+ parts

-

1k+ parts

-

10k+ parts

-

1,009

$0.156

-

-

-

Corphita

USA . 1,569 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

-

1,569

$0.166

-

-

-

Corohmni

South Africa . 89 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

-

89

$0.184

-

-

-

Problanco Electronics

Mexico . 5,074 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,074

-

-

-

-

SupplyDigital Components

Austria . 2,550 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,550

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TANS Electronics

Latvia . 2,513 parts In-Stock

1+ parts

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2,513

-

-

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Kulean Microsystems

USA . 1,483 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,483

-

-

-

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UHIMA Technologies

Türkiye . 106 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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106

-

-

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-

Overview

Looking for reliable transient suppression devices? Look no further than the Onsemi MPTE-12RL4G. Manufactured by Onsemi, a trusted name in the industry, this product offers superior quality and performance. Ideal for a wide range of applications, this single-config device provides maximum protection against power surges and voltage spikes. With its high power dissipation capabilities and zener technology, customers can trust that their equipment is safeguarded at all times. Invest in the Onsemi MPTE-12RL4G for peace of mind and uninterrupted operation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Config: SINGLE

The single configuration simplifies installation and reduces complexity, making it easier to integrate into existing systems.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capacity, this device can effectively protect against transient surges and spikes in power, ensuring the safety of connected components.

No. of Terminals: 2

The 2-terminal design allows for straightforward connection and installation, reducing the chances of errors during setup.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable performance over time.

Minimum Breakdown Voltage: 14.1 V

The high minimum breakdown voltage ensures that the device activates only when necessary, offering effective protection without unnecessary interference in normal operations.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures fast response times and efficient suppression of voltage spikes, safeguarding sensitive electronics from damage.

Technical Specifications

Transient Suppression Devices MPTE-12RL4G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

14.1 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

21.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MPTE-12RL4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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